IPD90N03S4L-03
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPD90N03S4L-03
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 94
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 90
A
Tjⓘ - Максимальная температура канала: 175
°C
trⓘ -
Время нарастания: 6
ns
Cossⓘ - Выходная емкость: 1000
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033
Ohm
Тип корпуса:
TO252
- подбор MOSFET транзистора по параметрам
IPD90N03S4L-03
Datasheet (PDF)
..1. Size:157K infineon
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf 

IPD90N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 3.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N03S4L-03 PG-TO252-3-11 4N03L03
1.1. Size:160K infineon
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf 

IPD90N03S4L-02OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 2.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD90N03S4L-02
7.1. Size:163K infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf 

IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a
7.2. Size:163K infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf 

IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P
7.3. Size:184K infineon
ipd90n04s3-04 ds 1 0.pdf 

IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max
7.4. Size:152K infineon
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf 

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,
7.5. Size:154K infineon
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf 

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,
7.6. Size:163K infineon
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf 

IPD90N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.9mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-07 PG-TO252-3-11
7.7. Size:163K infineon
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf 

IPD90N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 5.1mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSonType Package MarkingIPD90N04S6-05 PG-TO252-3-11
7.8. Size:162K infineon
ipd90n04s3-h4.pdf 

IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max
7.9. Size:249K infineon
ipd90n08s4-05.pdf 

IPD90N08S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 80 VRDS(on),max 5.3mWID 90 AFeaturesPG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N08S4-05 PG-TO252-3-313 4N0805Maximum ratings, a
7.10. Size:163K infineon
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf 

IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1
7.11. Size:154K infineon
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf 

IPD90N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4L-04 PG-TO252-3-313 4N04L04Maximum ratin
7.12. Size:152K infineon
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf 

IPD90N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 2.4mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-02 PG-TO252-3-313 4N0402Maximum ratings,
7.13. Size:163K infineon
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf 

IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P
7.14. Size:154K infineon
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf 

IPD90N04S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 86 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-05 PG-TO252-3-313 4N0405Maximum ratings,
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History: SQJ474EP
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