Справочник MOSFET. IPI80N04S3-H4

 

IPI80N04S3-H4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPI80N04S3-H4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 115 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 850 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI80N04S3-H4

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI80N04S3-H4 Datasheet (PDF)

 ..1. Size:169K  infineon
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IPI80N04S3-H4

IPB80N04S3-H4IPI80N04S3-H4, IPP80N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 3.1. Size:187K  infineon
ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdfpdf_icon

IPI80N04S3-H4

IPB80N04S3-04IPI80N04S3-04, IPP80N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.8mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 3.2. Size:188K  infineon
ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipp80n04s3 b80n04s3 i80n04s3-03.pdfpdf_icon

IPI80N04S3-H4

IPB80N04S3-03IPI80N04S3-03, IPP80N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on

 3.3. Size:188K  infineon
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IPI80N04S3-H4

IPB80N04S3-06IPI80N04S3-06, IPP80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 5.4mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

Другие MOSFET... IPI70N10SL-16 , IPI80N03S4L-03 , IPI80N03S4L-04 , IPI80N04S2-04 , IPI80N04S2-H4 , IPI80N04S3-03 , IPI80N04S3-04 , IPI80N04S3-06 , 2N7002 , IPI80N04S4-04 , IPI80N04S4L-04 , IPI80N06S2-07 , IPI80N06S2-08 , IPI80N06S2L-05 , IPI80N06S2L-11 , IPI80N06S4-05 , IPI80N06S4-07 .

History: NDB6050 | 2SK1586 | SSH70N10A

 

 
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