IPI80N06S4-05 - аналоги и даташиты транзистора

 

IPI80N06S4-05 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: IPI80N06S4-05
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 1230 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0057 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI80N06S4-05

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI80N06S4-05 Datasheet (PDF)

 ..1. Size:170K  infineon
 ipb80n06s4-05 ipi80n06s4-05 ipp80n06s4-05 ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf pdf_icon

IPI80N06S4-05

IPB80N06S4-05IPI80N06S4-05, IPP80N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 5.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

 2.1. Size:175K  infineon
 ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf pdf_icon

IPI80N06S4-05

IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

 2.2. Size:171K  infineon
 ipb80n06s4-07 ipi80n06s4-07 ipp80n06s4-07.pdf pdf_icon

IPI80N06S4-05

IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT

 4.1. Size:174K  infineon
 ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf pdf_icon

IPI80N06S4-05

IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPI80N04S3-06 , IPI80N04S3-H4 , IPI80N04S4-04 , IPI80N04S4L-04 , IPI80N06S2-07 , IPI80N06S2-08 , IPI80N06S2L-05 , IPI80N06S2L-11 , IRFZ44N , IPI80N06S4-07 , IPI80N06S4L-05 , IPI80N06S4L-07 , IPI80N08S2-07 , IPI80P03P4L-04 , IPI80P03P4L-07 , IPI90N04S4-02 , IPI90N06S4-04 .

History: IXTH50P10 | 2SK160A | IRL8113S | 2SJ220L | SQJA96EP | 2SJ133-Z | 2SJ606-Z

 

 
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