IPI037N06L3G - параметры транзистора MOSFET, его аналоги, datasheet

IPI037N06L3G Datasheet (PDF)

..1. Size:475K infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf pdf_icon

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

6.1. Size:1018K infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

6.2. Size:494K infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf pdf_icon

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

6.3. Size:261K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS

Другие MOSFET... IPI90N06S4-04 , IPI90N06S4L-04 , IPI023NE7N3G , IPI024N06N3G , IPI028N08N3G , IPI030N10N3G , IPI032N06N3G , IPI034NE7N3G , IRF3710 , IPI037N08N3G , IPI040N06N3G , IPI041N12N3G , IPI045N10N3G , IPI04CN10NG , IPI052NE7N3G , IPI057N08N3G , IPI070N08N3G .