IPI057N08N3G - описание и поиск аналогов

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 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf 

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1

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 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf 

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia

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 ipi051n15n5.pdf 

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 ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf 

IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features V 100 V DS R ( 492??6= ?@C>2= =6G6= R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on) I 100 A D R /6CJ =@H @? C6D DE2?46 R DS(on) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7

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 ipp052ne7n3 ipi052ne7n3.pdf 

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 9.4. Size:844K  infineon
 ipp052ne7n3g ipi052ne7n3g.pdf 

## ! ! # ! ! TM # A0 m D n) m x Q #4513I CG9D389>7 1>4 3?>F5BD5BC D Q H35

 9.5. Size:1561K  infineon
 ipi051n15n5.pdf 

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 ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf 

IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V 85 V DS N-channel, normal level R 5.1 m DS(on),max (TO 263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

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 ipi05cn10n.pdf 

isc N-Channel MOSFET Transistor IPI05CN10N FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 9.8. Size:286K  inchange semiconductor
 ipi051n15n5.pdf 

isc N-Channel MOSFET Transistor IPI051N15N5 FEATURES Static drain-source on-resistance RDS(on) 5.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY