IPI086N10N3G - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPI086N10N3G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 523 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0086 Ohm
Тип корпуса: TO262
Аналог (замена) для IPI086N10N3G
IPI086N10N3G Datasheet (PDF)
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
ipi086n10n3.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI086N10N3FEATURESStatic drain-source on-resistance:RDS(on) 8.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(
ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target
Другие MOSFET... IPI045N10N3G , IPI04CN10NG , IPI052NE7N3G , IPI057N08N3G , IPI070N08N3G , IPI072N10N3G , IPI075N15N3G , IPI076N12N3G , AO3400 , IPI100N04S4-H2 , IPI100N08N3G , IPI110N20N3G , IPI111N15N3G , IPI120N04S4-01 , IPI120N04S4-02 , IPI120N06S4-02 , IPI120N06S4-H1 .
History: PB5G8JW | PB502CW | IPI110N20N3G | PB5B5BX | PB5A2BX
History: PB5G8JW | PB502CW | IPI110N20N3G | PB5B5BX | PB5A2BX



Список транзисторов
Обновления
MOSFET: SSC8P22CN2 | SSC8P22AN3 | SSC8P20AN2 | SSC8K23GN2 | SSC8K21GN3 | SSC8415GS6 | AP20P01BF | AP20N10D | AP20N06S | AP20N06D | AP20N06BD | AP20N03D | AP20N02DF | AP20N02BF | AP20H04NF | AP20H03NF
Popular searches
ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg