IPI120N06S4-02 - аналоги и даташиты транзистора

 

IPI120N06S4-02 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: IPI120N06S4-02
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 2980 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для IPI120N06S4-02

   - подбор ⓘ MOSFET транзистора по параметрам

 

IPI120N06S4-02 Datasheet (PDF)

 ..1. Size:170K  infineon
 ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf pdf_icon

IPI120N06S4-02

IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

 1.1. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf pdf_icon

IPI120N06S4-02

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 2.1. Size:174K  infineon
 ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf pdf_icon

IPI120N06S4-02

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 2.2. Size:170K  infineon
 ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf pdf_icon

IPI120N06S4-02

IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IPI076N12N3G , IPI086N10N3G , IPI100N04S4-H2 , IPI100N08N3G , IPI110N20N3G , IPI111N15N3G , IPI120N04S4-01 , IPI120N04S4-02 , 5N60 , IPI120N06S4-H1 , IPI126N10N3G , IPI139N08N3G , IPI147N12N3G , IPI180N10N3G , IPI200N15N3G , IPI200N25N3G , IPI26CN10NG .

History: SI7148DP | CS8N50A8R | OSG65R460AZF | IRFSL3206PBF | IPI50R299CP | OSG65R380FZF | 2SK2439

 

 
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