IPI60R099CP. Аналоги и основные параметры

Наименование производителя: IPI60R099CP

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 255 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 130 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO262

Аналог (замена) для IPI60R099CP

- подборⓘ MOSFET транзистора по параметрам

 

IPI60R099CP даташит

 ..1. Size:620K  infineon
ipi60r099cp.pdfpdf_icon

IPI60R099CP

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 ..2. Size:285K  infineon
ipi60r099cp rev20 a.pdfpdf_icon

IPI60R099CP

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 ..3. Size:287K  inchange semiconductor
ipi60r099cp.pdfpdf_icon

IPI60R099CP

isc N-Channel MOSFET Transistor IPI60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 0.1. Size:325K  infineon
ipi60r099cpa.pdfpdf_icon

IPI60R099CP

IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

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