IPI60R165CP - описание и поиск аналогов

 ..1. Size:547K  infineon
 ipi60r165cp.pdf 

IPI60R165CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"%

 ..2. Size:286K  inchange semiconductor
 ipi60r165cp.pdf 

isc N-Channel MOSFET Transistor IPI60R165CP FEATURES Static drain-source on-resistance RDS(on) 0.165 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 7.1. Size:1495K  infineon
 ipi60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

 7.2. Size:550K  infineon
 ipi60r199cpa.pdf 

IPI60R199CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"% #

 7.3. Size:544K  infineon
 ipi60r199cp.pdf 

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 7.4. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

 7.5. Size:547K  infineon
 ipi60r125cp.pdf 

IPI60R125CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO220 PG TO2

 7.6. Size:264K  inchange semiconductor
 ipi60r190c6.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R190C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 7.7. Size:286K  inchange semiconductor
 ipi60r199cp.pdf 

isc N-Channel MOSFET Transistor IPI60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 7.8. Size:286K  inchange semiconductor
 ipi60r125cp.pdf 

isc N-Channel MOSFET Transistor IPI60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM