IPI60R600CP - описание и поиск аналогов

 ..1. Size:541K  infineon
 ipi60r600cp.pdf 

IPI60R600CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262

 ..2. Size:286K  inchange semiconductor
 ipi60r600cp.pdf 

isc N-Channel MOSFET Transistor IPI60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 8.1. Size:1201K  infineon
 ipi60r380c6.pdf 

MOSFET + =L9D - PA

 8.2. Size:325K  infineon
 ipi60r099cpa.pdf 

IPI60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO262 Ultra low gate charge PG-TO262-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

 8.3. Size:547K  infineon
 ipi60r165cp.pdf 

IPI60R165CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"%

 8.4. Size:1495K  infineon
 ipi60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

 8.5. Size:620K  infineon
 ipi60r099cp.pdf 

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 8.6. Size:317K  infineon
 ipi60r385cp.pdf 

IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R 0.385 DS(on),max Ultra low gate charge Q 17 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262 Pb-free lead plating; RoHS compliant CoolMOS CP is specially desig

 8.7. Size:550K  infineon
 ipi60r199cpa.pdf 

IPI60R199CP C IMOS # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"% #

 8.8. Size:544K  infineon
 ipi60r199cp.pdf 

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 8.9. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

 8.10. Size:285K  infineon
 ipi60r099cp rev20 a.pdf 

IPI60R099CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Worldwide best R in TO220 ds,on R 0.099 DS(on),max Ultra low gate charge Q 60 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO262-3-1 Pb-free lead plating; RoHS compliant CoolMOS CP is specially

 8.11. Size:1432K  infineon
 ipi60r280c6.pdf 

MOSFET + =L9D - PA

 8.12. Size:540K  infineon
 ipi60r520cp.pdf 

IPI60R520CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262

 8.13. Size:1368K  infineon
 ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R380C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R380C6, IPI60R380C6 IPB60R380C6, IPP60R380C6 IPA60R380C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according

 8.14. Size:547K  infineon
 ipi60r125cp.pdf 

IPI60R125CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO220 PG TO2

 8.15. Size:556K  infineon
 ipi60r250cp.pdf 

IPI60R250CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound

 8.16. Size:556K  infineon
 ipi60r299cp.pdf 

IPI60R299CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound PG TO262 7!"%

 8.17. Size:1587K  infineon
 ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according

 8.18. Size:264K  inchange semiconductor
 ipi60r380c6.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R380C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.19. Size:286K  inchange semiconductor
 ipi60r165cp.pdf 

isc N-Channel MOSFET Transistor IPI60R165CP FEATURES Static drain-source on-resistance RDS(on) 0.165 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.20. Size:264K  inchange semiconductor
 ipi60r190c6.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPI60R190C6 FEATURES With To-262(I2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 8.21. Size:287K  inchange semiconductor
 ipi60r099cp.pdf 

isc N-Channel MOSFET Transistor IPI60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.22. Size:287K  inchange semiconductor
 ipi60r385cp.pdf 

isc N-Channel MOSFET Transistor IPI60R385CP FEATURES Static drain-source on-resistance RDS(on) 0.385 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.23. Size:286K  inchange semiconductor
 ipi60r199cp.pdf 

isc N-Channel MOSFET Transistor IPI60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.24. Size:286K  inchange semiconductor
 ipi60r280c6.pdf 

isc N-Channel MOSFET Transistor IPI60R280C6 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use ABSOLUTE MA

 8.25. Size:287K  inchange semiconductor
 ipi60r520cp.pdf 

isc N-Channel MOSFET Transistor IPI60R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.26. Size:286K  inchange semiconductor
 ipi60r125cp.pdf 

isc N-Channel MOSFET Transistor IPI60R125CP FEATURES Static drain-source on-resistance RDS(on) 0.125 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.27. Size:287K  inchange semiconductor
 ipi60r250cp.pdf 

isc N-Channel MOSFET Transistor IPI60R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 8.28. Size:287K  inchange semiconductor
 ipi60r299cp.pdf 

isc N-Channel MOSFET Transistor IPI60R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM