Справочник MOSFET. APT8056BVR

 

APT8056BVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT8056BVR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 185 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 370 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT8056BVR

 

 

APT8056BVR Datasheet (PDF)

 ..1. Size:61K  apt
apt8056bvr.pdf

APT8056BVR
APT8056BVR

APT8056BVR800V 16A 0.560POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 ..2. Size:376K  inchange semiconductor
apt8056bvr.pdf

APT8056BVR
APT8056BVR

isc N-Channel MOSFET Transistor APT8056BVRFEATURESDrain Current I =16A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.56(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 5.1. Size:63K  apt
apt8056bvfr.pdf

APT8056BVR
APT8056BVR

APT8056BVFR800V 16A 0.560POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 8.1. Size:156K  apt
apt8052bllg.pdf

APT8056BVR
APT8056BVR

APT8052BLLAPT8052SLL800V 15A 0.520RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)SLLand Qg. Power MOS 7 combines lower conduction and switching lossesalong

 8.2. Size:69K  apt
apt8052bll.pdf

APT8056BVR
APT8056BVR

APT8052BLLAPT8052SLL800V 15A 0.520WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

 8.3. Size:157K  apt
apt8052bfllg apt8052sfllg.pdf

APT8056BVR
APT8056BVR

APT8052BFLLAPT8052SFLL800V 15A 0.520R POWER MOS 7 FREDFETBFLLD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

 8.4. Size:60K  apt
apt8058hvr.pdf

APT8056BVR
APT8056BVR

APT8058HVR800V 13.5A 0.580POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 8.5. Size:71K  apt
apt8052bfll.pdf

APT8056BVR
APT8056BVR

APT8052BFLLAPT8052SFLL800V 15A 0.520WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

 8.6. Size:376K  inchange semiconductor
apt8052bll.pdf

APT8056BVR
APT8056BVR

isc N-Channel MOSFET Transistor APT8052BLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.7. Size:376K  inchange semiconductor
apt8052bfll.pdf

APT8056BVR
APT8056BVR

isc N-Channel MOSFET Transistor APT8052BFLLFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... APT8030B2VFR , APT8030B2VR , APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , IRF1404 , APT8058HVR , APT8065AVR , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR .

 

 
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