APT8056BVR. Аналоги и основные параметры
Наименование производителя: APT8056BVR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 370 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 370 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
Тип корпуса: TO247
Аналог (замена) для APT8056BVR
- подборⓘ MOSFET транзистора по параметрам
APT8056BVR даташит
apt8056bvr.pdf
APT8056BVR 800V 16A 0.560 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt8056bvr.pdf
isc N-Channel MOSFET Transistor APT8056BVR FEATURES Drain Current I =16A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.56 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
apt8056bvfr.pdf
APT8056BVFR 800V 16A 0.560 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt8052bllg.pdf
APT8052BLL APT8052SLL 800V 15A 0.520 R BLL POWER MOS 7 MOSFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) SLL and Qg. Power MOS 7 combines lower conduction and switching losses along
Другие IGBT... APT8030B2VFR, APT8030B2VR, APT8030JN, APT8030JVFR, APT8030JVR, APT8030LVFR, APT8030LVR, APT8056BVFR, 50N06, APT8058HVR, APT8065AVR, APT8065BVFR, APT8065BVR, APT8065SVR, APT8067HVR, APT8075BN, APT8075BVR
History: APT8067HVR
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