Справочник MOSFET. IPI65R660CFD

 

IPI65R660CFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPI65R660CFD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 62.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.66 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IPI65R660CFD

 

 

IPI65R660CFD Datasheet (PDF)

 ..1. Size:4455K  infineon
 ipw65r660cfd ipb65r660cfd ipi65r660cfd ipa65r660cfd ipp65r660cfd ipd65r660cfd.pdf

IPI65R660CFD IPI65R660CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R660CFDData SheetRev. 2.4FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R660CFD, IPB65R660CFD, IPP65R660CFDIPA65R660CFD, IPD65R660CFD, IPI65R660CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for hi

 ..2. Size:286K  inchange semiconductor
 ipi65r660cfd.pdf

IPI65R660CFD IPI65R660CFD

isc N-Channel MOSFET Transistor IPI65R660CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.66Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode

 7.1. Size:2158K  infineon
 ipd65r600c6 ipi65r600c6 ipb65r600c6 ipp65r600c6 ipa65r600c6.pdf

IPI65R660CFD IPI65R660CFD

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 7.2. Size:2092K  infineon
 ipb65r600c6 ipa65r600c6 ipp65r600c6 ipd65r600c6 ipi65r600c6.pdf

IPI65R660CFD IPI65R660CFD

MOSFET+ =L9D - PA;%'*H (>E4@ +@0=A8AB>@ "( ) "(" ) "( ) "(( ) IPA65R600C61 Descriptin!GGD+ - 1Y AK 9 J=NGDMLAGF9JQ L=;@FGDG?Q >GJ @A?@ NGDL9?= HGO=J+ - 1$#2K

 7.3. Size:286K  inchange semiconductor
 ipi65r600c6.pdf

IPI65R660CFD IPI65R660CFD

isc N-Channel MOSFET Transistor IPI65R600C6FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOLUTE MAXIMUM RATI

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