IPI80CN10NG - параметры транзистора MOSFET, его аналоги, datasheet

IPI80CN10NG Datasheet (PDF)

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IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM)DS(on)ID 13 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

4.1. Size:705K infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf pdf_icon

IPB80CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G IPU78CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

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ipb79cn10n-g ipd78cn10n-g ipi80cn10n-g ipp80cn10n-g.pdf pdf_icon

IPB79CN10N G IPD78CN10N GIPI80CN10N G IPP80CN10N G OptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 78mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 13 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

4.3. Size:261K inchange semiconductor
ipi80cn10n.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI80CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.08Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... IPI60R385CP , IPI60R520CP , IPI60R600CP , IPI65R280C6 , IPI65R380C6 , IPI65R600C6 , IPI65R660CFD , IPI70N04S4-06 , IRF830 , IPI80N04S4-03 , IPI90R1K0C3 , IPI90R1K2C3 , IPI90R340C3 , IPI90R500C3 , IPI90R800C3 , IPL60R199CP , IPL60R299CP .