APT8065AVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT8065AVR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 200 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 11.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.65 Ohm
Тип корпуса: TO3
Аналог (замена) для APT8065AVR
APT8065AVR Datasheet (PDF)
apt8065avr.pdf
APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt8065svr.pdf
APT8065SVR800V 13A 0.650POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt8065bvfr.pdf
APT8065BVFR800V 13A 0.650POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt8065.pdf
APT8065AVR800V 11.5A 0.650POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt8065bvr.pdf
APT8065BVR800V 13A 0.650POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt8065bvfr.pdf
isc N-Channel MOSFET Transistor APT8065BVFRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt8065bvr.pdf
isc N-Channel MOSFET Transistor APT8065BVRFEATURESDrain Current I =13A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... APT8030JN , APT8030JVFR , APT8030JVR , APT8030LVFR , APT8030LVR , APT8056BVFR , APT8056BVR , APT8058HVR , IRFP460 , APT8065BVFR , APT8065BVR , APT8065SVR , APT8067HVR , APT8075BN , APT8075BVR , BF1100 , BF1100R .
