IPP100N08S2L-07 - параметры транзистора MOSFET, его аналоги, datasheet

IPP100N08S2L-07 Datasheet (PDF)

0.1. Size:154K infineon
ipb100n08s2l-07 ipp100n08s2l-07 ipp100n08s2l-07 ipb100n08s2l-07.pdf pdf_icon

IPB100N08S2L-07IPP100N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.5mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avala

3.1. Size:158K infineon
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IPB100N08S2-07IPP100N08S2-07, IPI100N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 100 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

5.1. Size:1010K infineon
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IPP100N08N3 G IPI100N08N3 GIPB097N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 7 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI 7 DQ H35>5?B=1

5.2. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP100N08N3IIPP100N08N3FEATURESStatic drain-source on-resistance:RDS(on) 9.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Другие MOSFET... IPL60R299CP , IPL60R385CP , IPP100N04S2-04 , IPP100N04S2L-03 , IPP100N04S3-03 , IPP100N06S2-05 , IPP100N06S2L-05 , IPP100N08S2-07 , IRF9640 , IPP100N10S3-05 , IPP100P03P3L-04 , IPP120N04S3-02 , IPP120N06S4-03 , IPP22N03S4L-15 , IPP45N06S4-09 , IPP45N06S4L-08 , IPP45P03P4L-11 .