IPP70N04S3-07 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP70N04S3-07
Маркировка: 3N0407
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 79 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 30 nC
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 610 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP70N04S3-07
IPP70N04S3-07 Datasheet (PDF)
ipp70n04s3 ipb70n04s3 ipi70n04s3-07.pdf
IPB70N04S3-07IPI70N04S3-07, IPP70N04S3-07OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t
ipb70n04s4-06 ipi70n04s4-06 ipp70n04s4-06.pdf
IPB70N04S4-06IPI70N04S4-06, IPP70N04S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 6.2mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf
IPB70N12S3-11IPI70N12S3-11, IPP70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperatur
ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf
IPI70N10SL-16IPP70N10SL-16, IPB70N10SL-16SIPMOS Power-TransistorProduct SummaryFeatureVDS100 V N-ChannelRDS(on) 16 m Enhancement modeID 70 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated 2 dv/dt rated32 Green Package 1(lead free)P-TO220-3-1Type Package Ordering Code MarkingIPP7
ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf
IPB70N10S3-12IPI70N10S3-12, IPP70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 11.3mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanc
ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf
IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mWDS(on),maxI 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche
ipp70n10s3l ipb70n10s3l ipi70n10s3l-12.pdf
IPB70N10S3L-12IPI70N10S3L-12, IPP70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 12mDS(on),max I 70 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan
Другие MOSFET... IPP120N06S4-03 , IPP22N03S4L-15 , IPP45N06S4-09 , IPP45N06S4L-08 , IPP45P03P4L-11 , IPP47N10S-33 , IPP47N10SL-26 , IPP50N10S3L-16 , IRF740 , IPP70N10S3-12 , IPP70N10S3L-12 , IPP70N10SL-16 , IPP77N06S2-12 , IPP80N03S4L-03 , IPP80N03S4L-04 , IPP80N04S2-04 , IPP80N04S2-H4 .
History: FDPF770N15A
History: FDPF770N15A
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918