IPP80N03S4L-03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP80N03S4L-03
Маркировка: 4N03L03
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 136 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 110 nC
trⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 1900 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP80N03S4L-03
IPP80N03S4L-03 Datasheet (PDF)
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf
IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
ipi80n03s4l-03 ipp80n03s4l-03.pdf
IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf
IPB80N03S4L-03IPI80N03S4L-04, IPP80N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipp80n06s2-05 ipb80n06s2-05.pdf
IPB80N06S2-05IPP80N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf
IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l
ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf
IPB80N04S4-04IPI80N04S4-04, IPP80N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.2mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
ipp80n04s2l-03 ipb80n04s2l-03.pdf
IPB80N04S2L-03IPP80N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf
IPB80N04S3-04IPI80N04S3-04, IPP80N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.8mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipp80n04s3 b80n04s3 i80n04s3-03.pdf
IPB80N04S3-03IPI80N04S3-03, IPP80N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf
IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf
IPB80N06S2L-11IPP80N06S2L-11, IPI80N06S2L-11OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 10.7mWDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo
ipb80n04s4l-04 ipi80n04s4l-04 ipp80n04s4l-04 ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf
IPB80N04S4L-04IPI80N04S4L-04, IPP80N04S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.0mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf
IPB80N04S2-04IPP80N04S2-04, IPI80N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.4mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf
IPB80N06S2L-09IPP80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 8.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n04s4-03 ipi80n04s4-03 ipp80n04s4-03 ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf
IPB80N04S4-03IPI80N04S4-03, IPP80N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf
IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf
IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf
IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf
IPB80N06S2-07IPP80N06S2-07, IPI80N06S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf
IPB80N06S2L-07IPP80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n06s4-07 ipi80n06s4-07 ipp80n06s4-07.pdf
IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
ipb80n06s2-h5 ipp80n06s2-h5 ipp80n06s2-h5 ipb80n06s2-h5.pdf
IPB80N06S2-H5IPP80N06S2-H5OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 5.2mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf
IPB80N04S2-H4IPP80N04S2-H4, IPI80N04S2-H4OptiMOS Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.7mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre
ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf
IPB80N06S4L-07IPI80N06S4L-07, IPP80N06S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 6.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb80n08s2l-07 ipp80n08s2l-07.pdf
IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n06s4-05 ipi80n06s4-05 ipp80n06s4-05 ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf
IPB80N06S4-05IPI80N06S4-05, IPP80N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 5.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
ipp80n06s2l-h5 ipb80n06s2l-h5.pdf
IPB80N06S2L-H5IPP80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf
IPB80N04S3-06IPI80N04S3-06, IPP80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 5.4mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t
ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf
IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf
IPB80N04S3-H4IPI80N04S3-H4, IPP80N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf
IPB80N06S2-09IPP80N06S2-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 8.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n06s2l-06 ipp80n06s2l-06 ipp80n06s2l-06 ipb80n06s2l-06.pdf
IPB80N06S2L-06IPP80N06S2L-06OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipp80n04s3-h4.pdf
IPB80N04S3-H4IPI80N04S3-H4, IPP80N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
ipp80n06s2l-07.pdf
IPP80N06S2L-07www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Li
ipp80n06s2-09.pdf
isc N-Channel MOSFET Transistor IPP80N06S2-09FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R : 9.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingType Marking
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