IPP028N08N3G. Аналоги и основные параметры
Наименование производителя: IPP028N08N3G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 2890 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP028N08N3G
- подборⓘ MOSFET транзистора по параметрам
IPP028N08N3G даташит
..1. Size:457K 1
ipp028n08n3g ipi028n08n3g.pdf 
IPP028N08N3 G IPI028N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 2.8 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP02CN08N Pb-free lead plating; RoHS compliant Qualified ac
9.2. Size:1309K infineon
ipp020n08n5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP020N08N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP020N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis
9.3. Size:587K infineon
ipp029n06n.pdf 
Type IPP029N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 2.9 mW Superior thermal resistance ID 100 A N-channel QOSS nC 65 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 56 Pb-free lead plating; RoHS compliant Ha
9.4. Size:999K infineon
ipp024n06n3g ipb021n06n3g ipi024n06n3g.pdf 
pe IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H35
9.5. Size:583K infineon
ipb023n04n ipp023n04ng ipb023n04ng.pdf 
pe IPP023N04N G IPB023N04N G 3 Power-Transistor Product Summary Features V 4 D Q &( , - 7@B ( + ?8 2?5 . ? ?D6BBEAD 3=6 )@G6B ,EAA=I R m , @? >2H 1) Q * E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C I D Q ' 492??6= Q '@B>2= =6F6= Q . =DB2 =@G @? B6C CD2?46 R D n) Q F2=2?496 D6CD65 Q )3 7B66 A=2D ?8 + @", 4@>A= 2?D Q "2=@86? 7B66 244@B5 ?8 D@ # Type #) ' '
9.6. Size:1808K infineon
ipp027n08n5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP027N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP027N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis
9.7. Size:483K infineon
ipb021n06n3g ipi024n06n3g ipp024n06n3g.pdf 
Type IPB021N06N3 G IPI024N06N3 G IPP024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 2.1 m DS(on),max (SMD) Optimized technology for DC/DC converters I 120 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanch
9.8. Size:1330K infineon
ipp023n10n5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP023N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP023N10N5 TO-220-3 1 Description tab Features N-channel, normal level Optimized for FOM OSS Very low on-resistance R DS(on) 175 C operating temperatur
9.9. Size:574K infineon
ipp020n06n.pdf 
Type IPP020N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 2.0 mW Superior thermal resistance ID 120 A N-channel QOSS nC 119 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 106 Pb-free lead plating; RoHS compliant
9.10. Size:1808K infineon
ipp023n08n5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP023N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP023N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis
9.11. Size:245K infineon
ipp023n04n-g ipb023n04n-g.pdf 
Type IPP023N04N G IPB023N04N G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS MOSFET for ORing and Uninterruptible Power Supply R 2.3 m DS(on),max Qualified according to JEDEC1) for target applications I 90 A D N-channel Normal level Ultra-low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Hal
9.13. Size:1621K cn vbsemi
ipp023n10n5.pdf 
IPP023N10N5 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) d Qg (TYP.) Maximum 175 C junction temperature 0.005 at VGS = 10 V 120 100 72 100 % Rg and UIS tested 0.006 at VGS = 7.5 V 120 Material categorization for definitions of compliance please see D TO-220AB G S S S D G
9.14. Size:246K inchange semiconductor
ipp029n06n.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP029N06N IIPP029N06N FEATURES Static drain-source on-resistance RDS(on) 2.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX
9.15. Size:246K inchange semiconductor
ipp023ne7n3.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP023NE7N3 IIPP023NE7N3 FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M
9.16. Size:245K inchange semiconductor
ipp020n06n.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP020N06N IIPP020N06N FEATURES Static drain-source on-resistance RDS(on) 2.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX
9.17. Size:251K inchange semiconductor
ipp024n06n3.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP024N06N3 IIPP024N06N3 FEATURES Static drain-source on-resistance RDS(on) 2.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M
9.18. Size:245K inchange semiconductor
ipp023n04n.pdf 
isc N-Channel MOSFET Transistor IPP023N04N,IIPP023N04N FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION For ORing and Uninterruptible Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
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