IPP35CN10NG - параметры транзистора MOSFET, его аналоги, datasheet

IPP35CN10NG Datasheet (PDF)

..1. Size:854K infineon
ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPB34CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM)DS(on)ID 27 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

4.1. Size:704K infineon
ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

4.2. Size:246K inchange semiconductor
ipp35cn10n.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP35CN10NIIPP35CN10NFEATURESStatic drain-source on-resistance:RDS(on) 0.035Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MA

Другие MOSFET... IPP16CN10NG , IPP180N10N3G , IPP200N15N3G , IPP200N25N3G , IPP230N06L3G , IPP260N06N3G , IPP26CN10NG , IPP320N20N3G , IRF3710 , IPP50CN10NG , IPP50R140CP , IPP50R199CP , IPP50R250CP , IPP50R299CP , IPP50R350CP , IPP50R380CE , IPP50R399CP .