IPP50R520CP - описание и поиск аналогов

 ..1. Size:551K  infineon
 ipp50r520cp.pdf 

IPP50R520CP # %?88,

 ..2. Size:245K  inchange semiconductor
 ipp50r520cp.pdf 

isc N-Channel MOSFET Transistor IPP50R520CP IIPP50R520CP FEATURES Static drain-source on-resistance RDS(on) 0.52 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 7.1. Size:1484K  infineon
 ipp50r500ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R500CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPP50R500CE TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:207K  inchange semiconductor
 ipp50r500ce.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP50R500CE FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS

 8.1. Size:2210K  infineon
 ipa50r190ce ipp50r190ce ipw50r190ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s

 8.2. Size:550K  infineon
 ipp50r299cp.pdf 

IPP50R299CP C IMOSTM # A0

 8.3. Size:547K  infineon
 ipp50r399cp.pdf 

IPP50R399CP C IMOSTM # A0

 8.4. Size:1874K  infineon
 ipw50r190ce ipp50r190ce.pdf 

IPW50R190CE, IPP50R190CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

 8.5. Size:549K  infineon
 ipp50r250cp.pdf 

IPP50R250CP C IMOSTM # A0

 8.6. Size:2917K  infineon
 ipp50r380ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S

 8.7. Size:550K  infineon
 ipp50r199cp.pdf 

IPP50R199CP C IMOSTM # A0

 8.8. Size:563K  infineon
 ipp50r350cp.pdf 

IPP50R350CP C IMOSTM # A0

 8.9. Size:553K  infineon
 ipp50r140cp.pdf 

IPP50R140CP C IMOSTM # A0

 8.10. Size:2146K  infineon
 ipw50r280ce ipp50r280ce.pdf 

IPW50R280CE, IPP50R280CE MOSFET PG-TO 247 PG-TO 220 500V CoolMOS CE Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a co

 8.11. Size:2141K  infineon
 ipp50r280ce ipw50r280ce.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R280CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPW50R280CE, IPP50R280CE TO-247 TO-220 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction

 8.12. Size:245K  inchange semiconductor
 ipp50r299cp.pdf 

isc N-Channel MOSFET Transistor IPP50R299CP IIPP50R299CP FEATURES Static drain-source on-resistance RDS(on) 0.299 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.13. Size:245K  inchange semiconductor
 ipp50r399cp.pdf 

isc N-Channel MOSFET Transistor IPP50R399CP IIPP50R399CP FEATURES Static drain-source on-resistance RDS(on) 0.399 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.14. Size:245K  inchange semiconductor
 ipp50r250cp.pdf 

isc N-Channel MOSFET Transistor IPP50R250CP IIPP50R250CP FEATURES Static drain-source on-resistance RDS(on) 0.25 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.15. Size:245K  inchange semiconductor
 ipp50r380ce.pdf 

isc N-Channel MOSFET Transistor IPP50R380CE IIPP50R380CE FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S

 8.16. Size:245K  inchange semiconductor
 ipp50r199cp.pdf 

isc N-Channel MOSFET Transistor IPP50R199CP IIPP50R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.17. Size:244K  inchange semiconductor
 ipp50r280ce.pdf 

isc N-Channel MOSFET Transistor IPP50R280CE IIPP50R280CE FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S

 8.18. Size:245K  inchange semiconductor
 ipp50r350cp.pdf 

isc N-Channel MOSFET Transistor IPP50R350CP IIPP50R350CP FEATURES Static drain-source on-resistance RDS(on) 0.35 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.19. Size:245K  inchange semiconductor
 ipp50r140cp.pdf 

isc N-Channel MOSFET Transistor IPP50R140CP IIPP50R140CP FEATURES Static drain-source on-resistance RDS(on) 0.14 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.20. Size:245K  inchange semiconductor
 ipp50r190ce.pdf 

isc N-Channel MOSFET Transistor IPP50R190CE IIPP50R190CE FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S