Справочник MOSFET. IPP50R520CP

 

IPP50R520CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP50R520CP
   Маркировка: 5R520P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 66 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 31 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP50R520CP

 

 

IPP50R520CP Datasheet (PDF)

 ..1. Size:551K  infineon
ipp50r520cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R520CP# %?88,

 ..2. Size:245K  inchange semiconductor
ipp50r520cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R520CPIIPP50R520CPFEATURESStatic drain-source on-resistance:RDS(on) 0.52Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 7.1. Size:1484K  infineon
ipp50r500ce.pdf

IPP50R520CP
IPP50R520CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R500CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPP50R500CETO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 7.2. Size:207K  inchange semiconductor
ipp50r500ce.pdf

IPP50R520CP
IPP50R520CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP50R500CEFEATURESWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABS

 8.1. Size:2210K  infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf

IPP50R520CP
IPP50R520CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s

 8.2. Size:550K  infineon
ipp50r299cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R299CPCIMOSTM #:A0

 8.3. Size:547K  infineon
ipp50r399cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R399CPCIMOSTM #:A0

 8.4. Size:1874K  infineon
ipw50r190ce ipp50r190ce.pdf

IPP50R520CP
IPP50R520CP

IPW50R190CE, IPP50R190CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 8.5. Size:549K  infineon
ipp50r250cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R250CPCIMOSTM #:A0

 8.6. Size:2917K  infineon
ipp50r380ce.pdf

IPP50R520CP
IPP50R520CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

 8.7. Size:550K  infineon
ipp50r199cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R199CPCIMOSTM #:A0

 8.8. Size:563K  infineon
ipp50r350cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R350CPCIMOSTM #:A0

 8.9. Size:553K  infineon
ipp50r140cp.pdf

IPP50R520CP
IPP50R520CP

IPP50R140CPCIMOSTM #:A0

 8.10. Size:2146K  infineon
ipw50r280ce ipp50r280ce.pdf

IPP50R520CP
IPP50R520CP

IPW50R280CE, IPP50R280CEMOSFETPG-TO 247 PG-TO 220500V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE series combines theexperience of the leading SJ MOSFET supplier with high class innovationwhile representing a co

 8.11. Size:2141K  infineon
ipp50r280ce ipw50r280ce.pdf

IPP50R520CP
IPP50R520CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R280CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPW50R280CE, IPP50R280CETO-247 TO-2201 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction

 8.12. Size:245K  inchange semiconductor
ipp50r299cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R299CPIIPP50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.13. Size:245K  inchange semiconductor
ipp50r399cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R399CPIIPP50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.14. Size:245K  inchange semiconductor
ipp50r250cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R250CPIIPP50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.15. Size:245K  inchange semiconductor
ipp50r380ce.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R380CEIIPP50R380CEFEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

 8.16. Size:245K  inchange semiconductor
ipp50r199cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R199CPIIPP50R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.17. Size:244K  inchange semiconductor
ipp50r280ce.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R280CEIIPP50R280CEFEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

 8.18. Size:245K  inchange semiconductor
ipp50r350cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R350CPIIPP50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.19. Size:245K  inchange semiconductor
ipp50r140cp.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R140CPIIPP50R140CPFEATURESStatic drain-source on-resistance:RDS(on) 0.14Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 8.20. Size:245K  inchange semiconductor
ipp50r190ce.pdf

IPP50R520CP
IPP50R520CP

isc N-Channel MOSFET Transistor IPP50R190CEIIPP50R190CEFEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

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