Справочник MOSFET. IPP60R099CPA

 

IPP60R099CPA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP60R099CPA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 255 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 130 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.105 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP60R099CPA

 

 

IPP60R099CPA Datasheet (PDF)

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 ipp60r099cpa.pdf

IPP60R099CPA IPP60R099CPA

IPP60R099CPACoolMOSTM Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best R in TO220ds,on Ultra low gate chargePG-TO220-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for

 3.1. Size:571K  infineon
 ipp60r099cp.pdf

IPP60R099CPA IPP60R099CPA

IPP60R099CPCIMOSTM #:A0

 3.2. Size:245K  inchange semiconductor
 ipp60r099cp.pdf

IPP60R099CPA IPP60R099CPA

isc N-Channel MOSFET Transistor IPP60R099CPIIPP60R099CPFEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)

 4.1. Size:1879K  infineon
 ipp60r099c7.pdf

IPP60R099CPA IPP60R099CPA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPP60R099C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPP60R099C7TO-2201 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle a

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 ipp60r099c6.pdf

IPP60R099CPA IPP60R099CPA

MOSFET+ =L9D - PA

 4.3. Size:2087K  infineon
 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPP60R099CPA IPP60R099CPA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 4.4. Size:244K  inchange semiconductor
 ipp60r099c7.pdf

IPP60R099CPA IPP60R099CPA

isc N-Channel MOSFET Transistor IPP60R099C7IIPP60R099C7FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombines the benefits of a fast switching SJ MOSFET withexcellent ease of useABSOLUTE M

 4.5. Size:245K  inchange semiconductor
 ipp60r099c6.pdf

IPP60R099CPA IPP60R099CPA

isc N-Channel MOSFET Transistor IPP60R099C6IIPP60R099C6FEATURESStatic drain-source on-resistance:RDS(on) 0.099Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvide all benefits of a fast switching super junction MOS while notSacrificing ease of use

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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