IPP60R165CP Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPP60R165CP
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.165 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP60R165CP
IPP60R165CP Datasheet (PDF)
ipp60r165cp.pdf

IPP60R165CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.165DS(on),max Ultra low gate chargeQ 39 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220CoolMOS CP is specially designed
ipp60r165cp.pdf

isc N-Channel MOSFET Transistor IPP60R165CPIIPP60R165CPFEATURESStatic drain-source on-resistance:RDS(on) 0.165Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTION Ultra low gate charge High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct
ipp60r160c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj
Другие MOSFET... IPP530N15N3G , IPP600N25N3G , IPP60R099C6 , IPP60R099CP , IPP60R099CPA , IPP60R125C6 , IPP60R125CP , IPP60R160C6 , IRF4905 , IPP60R190C6 , IPP60R190E6 , IPP60R199CP , IPP60R250CP , IPP60R280C6 , IPP60R280E6 , IPP60R299CP , IPP60R380C6 .
History: 2SJ279S | 2SK1793-Z | UTT4850G-S08-R | QM6008G | BSH105 | HM3018KR | DAMH160N200
History: 2SJ279S | 2SK1793-Z | UTT4850G-S08-R | QM6008G | BSH105 | HM3018KR | DAMH160N200



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