IPW60R045CP - описание и поиск аналогов

 ..1. Size:644K  infineon
 ipw60r045cp.pdf 

IPW60R045CP C IMOS # A0

 ..2. Size:224K  inchange semiconductor
 ipw60r045cp.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP FEATURES Static drain-source on-resistance RDS(on) 45m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 0.1. Size:378K  infineon
 ipw60r045cpa.pdf 

IPW60R045CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.045 DS(on),max Q 150 nC g,typ Features Worldwide best R in TO247 ds,on Ultra low gate charge PG-TO247-3 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A

 5.1. Size:1357K  infineon
 ipw60r045p7.pdf 

IPW60R045P7 MOSFET PG-TO 247-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 6.1. Size:1883K  infineon
 ipw60r041p6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPW60R041P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R041P6 TO-247 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pion

 6.2. Size:1552K  infineon
 ipw60r040c7.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPW60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPW60R040C7 TO-247 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

 6.3. Size:862K  infineon
 ipw60r041c6 .pdf 

MOSFET *

 6.4. Size:1179K  infineon
 ipw60r040cfd7.pdf 

IPW60R040CFD7 MOSFET PG-TO 247-3 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 6.5. Size:243K  inchange semiconductor
 ipw60r041p6.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R041P6 IIPW60R041P6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 6.6. Size:242K  inchange semiconductor
 ipw60r041c6.pdf 

isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 FEATURES Static drain-source on-resistance RDS(on) 41m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

 6.7. Size:242K  inchange semiconductor
 ipw60r040c7.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R040C7 IIPW60R040C7 FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V