SPA07N65C3 - описание и поиск аналогов

 ..1. Size:390K  infineon
 spp07n65c3 spa07n65c3 spi07n65c3 rev1.92.pdf 

SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS Power Transistor V 650 V DS Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220-3 PG-TO262-3-1 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 PG-TO

 ..2. Size:1106K  infineon
 spp07n65c3 spa07n65c3 spi07n65c3.pdf 

 ..3. Size:200K  inchange semiconductor
 spa07n65c3.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA07N65C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 7.1. Size:702K  infineon
 spp07n60c3 spi07n60c3 spa07n60c3.pdf 

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P

 7.2. Size:620K  infineon
 spp07n60c3 spa07n60c3 spi07n60c3 rev.3.2.pdf 

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated 3 High peak current capability 2 3 2 1 1 P-TO220-3-31 Improved transconductance P-TO220-3-1 P

 7.3. Size:586K  infineon
 spa07n60cfd.pdf 

SPA07N60CFD C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features V 1jmax 650 V DS V &CIG>CH>8 ;6HI G 8DK GN 7D9N 9>D9 R 0.7 DS(on) max V "MIG B AN ADL G K GH G 8DK GN 8=6G;> 9 for industrial grade applications 688DG9>C53 10 2;= V 0D;I HL>I8=>C

 7.4. Size:158K  infineon
 spa07n60c2 spp07n60c2 spb07n60c2.pdf 

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS Power Transistor Feature Product Summary New revolutionary high voltage technology VDS @ Tjmax 650 V Ultra low gate charge RDS(on) 0.6 Periodic avalanche rated ID 7.3 A Extreme dv/dt rated Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

 7.5. Size:201K  inchange semiconductor
 spa07n60cfd.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA07N60CFD FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING