SPB04N60S5 - описание и поиск аналогов

 ..1. Size:360K  infineon
 spb04n60s5.pdf 

SPB04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB04N60S5 PG-TO263 Q67040-S4201 04N60S5 Maximum Ratings Par

 ..2. Size:258K  inchange semiconductor
 spb04n60s5.pdf 

Isc N-Channel MOSFET Transistor SPB04N60S5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

 6.1. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf 

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance P-TO

 6.2. Size:423K  infineon
 spb04n60c3.pdf 

VDS Tjmax G G

 6.3. Size:258K  inchange semiconductor
 spb04n60c3.pdf 

Isc N-Channel MOSFET Transistor SPB04N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo