Справочник MOSFET. SPB07N60S5

 

SPB07N60S5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPB07N60S5
   Маркировка: 07N60S5
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 83 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5.5 V
   Максимально допустимый постоянный ток стока |Id|: 7.3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 27 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 370 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm
   Тип корпуса: TO263

 Аналог (замена) для SPB07N60S5

 

 

SPB07N60S5 Datasheet (PDF)

 ..1. Size:646K  infineon
 spb07n60s5.pdf

SPB07N60S5 SPB07N60S5

SPB07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code Marking07N60S5SPB07N60S5 PG-TO263 Q67040-S4185Maximum RatingsPar

 ..2. Size:258K  inchange semiconductor
 spb07n60s5.pdf

SPB07N60S5 SPB07N60S5

Isc N-Channel MOSFET Transistor SPB07N60S5FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

 6.1. Size:1389K  infineon
 spb07n60c3.pdf

SPB07N60S5 SPB07N60S5

SPB07N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPB07N60C3 PG-TO263 Q67040-S4394 07N60C3Maximum RatingsP

 6.2. Size:158K  infineon
 spa07n60c2 spp07n60c2 spb07n60c2.pdf

SPB07N60S5 SPB07N60S5

SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi

 6.3. Size:258K  inchange semiconductor
 spb07n60c3.pdf

SPB07N60S5 SPB07N60S5

Isc N-Channel MOSFET Transistor SPB07N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

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