Справочник MOSFET. SPD50P03LG

 

SPD50P03LG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPD50P03LG
   Маркировка: 50P03L
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 95 nC
   trⓘ - Время нарастания: 21.7 ns
   Cossⓘ - Выходная емкость: 1220 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SPD50P03LG

 

 

SPD50P03LG Datasheet (PDF)

 ..1. Size:628K  infineon
 spd50p03lg.pdf

SPD50P03LG SPD50P03LG

SPD50P03L GOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 7mDS(on),max Enhancement modeI -50 AD Logic level 175C operating temperature Avalanche ratedPG-TO252-5 dv /dt rated High current rating Pb-free lead-plating, RoHS compliantPackage Marking Tape and reel information Lead Free PackingTypeSPD50P

 9.1. Size:268K  infineon
 spd50n06s2-14.pdf

SPD50P03LG SPD50P03LG

SPD50N06S2-14OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 14.4 m Enhancement modeID 50 A 175C operating temperatureP- TO252 -3-11 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPD50N06S2-14 P- TO252 -3-11 Q67060-S7418PN0614Maximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbo

 9.2. Size:1183K  infineon
 spd50n03s2l-06.pdf

SPD50P03LG SPD50P03LG

SPD50N03S2L-06 OptiMOS Power-TransistorFeatureProduct Summary N-ChannelVDS30 V Enhancement modeRDS(on) 6.4 m Logic LevelID 50 AP - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 9.3. Size:272K  infineon
 spd50n03s2l-06 spd50n03s2l-06t.pdf

SPD50P03LG SPD50P03LG

SPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 6.4 m Enhancement modeID 50 A Logic LevelPG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSP

 9.4. Size:1181K  infineon
 spd50n03s2-07 .pdf

SPD50P03LG SPD50P03LG

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 9.5. Size:1179K  infineon
 spd50n03s2-07.pdf

SPD50P03LG SPD50P03LG

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 9.6. Size:243K  inchange semiconductor
 spd50n03s2.pdf

SPD50P03LG SPD50P03LG

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2FEATURESStatic drain-source on-resistance:RDS(on)7.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 3

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