SPP08N50C3. Аналоги и основные параметры

Наименование производителя: SPP08N50C3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP08N50C3

- подборⓘ MOSFET транзистора по параметрам

 

SPP08N50C3 даташит

 ..1. Size:726K  infineon
 spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf pdf_icon

SPP08N50C3

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

 ..2. Size:248K  inchange semiconductor
 spp08n50c3.pdf pdf_icon

SPP08N50C3

isc N-Channel MOSFET Transistor SPP08N50C3 ISPP08N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM R

 8.1. Size:488K  infineon
 spp08n80c3.pdf pdf_icon

SPP08N50C3

SPP08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 8.2. Size:248K  inchange semiconductor
 spp08n80c3.pdf pdf_icon

SPP08N50C3

isc N-Channel MOSFET Transistor SPP08N80C3 ISPP08N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS

ПОКАЗАТЬ ЕЩЁ

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