SPP08P06PH - Даташиты. Аналоги. Основные параметры

SPP08P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -8.8 A dv/dt rated 175C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101

SPP08P06P H SIPMOS Power-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.3 Avalanche rated Continuous drain current ID -8.8 A dv/dt rated 175C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101

SPP08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

SPP08N50C3, SPI08N50C3SPA08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

isc N-Channel MOSFET Transistor SPP08N50C3ISPP08N50C3FEATURESStatic drain-source on-resistance:RDS(on) 0.6Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM R

isc N-Channel MOSFET Transistor SPP08N80C3ISPP08N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.65Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS