SPP20N60S5. Аналоги и основные параметры

Наименование производителя: SPP20N60S5

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 1170 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP20N60S5

- подборⓘ MOSFET транзистора по параметрам

 

SPP20N60S5 даташит

 ..1. Size:129K  infineon
 spp20n60s5.pdf pdf_icon

SPP20N60S5

SPP20N60S5 Final data SPB20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity Type Package Ordering Cod

 ..2. Size:370K  infineon
 spp20n60s5 .pdf pdf_icon

SPP20N60S5

SPP20N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge 2 Periodic avalanche rated Extreme dv/dt rated 3 2 1 Ultra low effective capacitances P-TO220-3-1 Improved transconductance Type Package Ordering Code Marking

 ..3. Size:246K  inchange semiconductor
 spp20n60s5.pdf pdf_icon

SPP20N60S5

isc N-Channel MOSFET Transistor SPP20N60S5 ISPP20N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance Improved transconductance ABSOLUT

 6.1. Size:643K  infineon
 spp20n60cfd.pdf pdf_icon

SPP20N60S5

SPP20N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Pa

ПОКАЗАТЬ ЕЩЁ

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