SPW35N60C3 - аналоги, параметры транзистора - Справочник транзисторов

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SPW35N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max New revolutionary high voltage technology R 0.1 DS(on),max Ultra low gate charge I 34.6 A D Periodic avalanche rated Extreme dv /dt rated Ultra low effective capacitances PG-TO247 Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q6704

..2. Size:244K inchange semiconductor
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isc N-Channel MOSFET Transistor SPW35N60C3 ISPW35N60C3 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60

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SPW35N60CFD TM C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D D U * 9K F9JC@IH=CB5FM

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isc N-Channel MOSFET Transistor SPW35N60CFD ISPW35N60CFD FEATURES Static drain-source on-resistance RDS(on) 118m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

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