IRF1503S datasheet, подбор замены

 ..1. Size:330K  international rectifier
 irf1503lpbf irf1503spbf.pdf 

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3m G l 175 C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes th

 ..2. Size:661K  international rectifier
 irf1503l irf1503s.pdf 

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Benefits Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Specificall

 ..3. Size:203K  inchange semiconductor
 irf1503s.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

 7.1. Size:552K  international rectifier
 irf1503.pdf 

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Features Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Speci

 7.2. Size:268K  international rectifier
 irf1503pbf.pdf 

PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3m G 175 C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to

 7.3. Size:245K  inchange semiconductor
 irf1503.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503 IIRF1503 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide v