IRF3610S - аналоги, параметры транзистора - Справочник транзисторов

IRF3610S даташит

..1. Size:294K international rectifier
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IRF3610SPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11.6m l Hard Switched and High Frequency Circuits ID S 103A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

..2. Size:258K inchange semiconductor
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Isc N-Channel MOSFET Transistor IRF3610S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

9.1. Size:139K international rectifier
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PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED IRF360 400V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20 25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a

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