IRF3805S-7P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IRF3805S-7P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 240 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 130 ns
Cossⓘ - Выходная емкость: 1260 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
Тип корпуса: TO263
Аналог (замена) для IRF3805S-7P
IRF3805S-7P Datasheet (PDF)
irf3805l-7ppbf irf3805s-7ppbf.pdf

PD - 97205BIRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestproc
irf3805s-7ppbf irf3805l-7ppbf.pdf

IRF3805S-7PPbFIRF3805L-7PPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 2.6mGl Lead-FreeSID = 160ADescriptionS (Pin 2, 3, 5, 6, 7)G (Pin 1) This HEXFET Power MOSFET utilizes the latestprocessing techni
auirf3805s-7p auirf3805l-7p.pdf

AUIRF3805S-7P AUTOMOTIVE GRADE AUIRF3805L-7P Features VDSS 55V Advanced Process Technology RDS(on) typ. 2.0m Ultra Low On-Resistance 175C Operating Temperature max. 2.6m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 240A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed
irf3805lpbf irf3805pbf irf3805spbf.pdf

PD - 97046AIRF3805PbFIRF3805SPbFIRF3805LPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 3.3mGDescriptionID = 75A This HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremely
Другие MOSFET... IRF3711Z , IRF3711ZCS , IRF3711ZL , IRF3711ZS , IRF3717 , IRF3805 , IRF3805L , IRF3805S , BS170 , IRF3808 , IRF3808S , IRF4104 , IRF4104G , IRF4104S , IRF540Z , IRF540ZL , IRF540ZS .
History: DH100P30I | LSD65R180GT | BL9N20-D | 2N4856 | PHP79NQ08LT | SM3116NBU | RJK0358DPA
History: DH100P30I | LSD65R180GT | BL9N20-D | 2N4856 | PHP79NQ08LT | SM3116NBU | RJK0358DPA



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