BF904R. Аналоги и основные параметры

Наименование производителя: BF904R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 7 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.03 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 2.2 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 200 Ohm

Тип корпуса: SOT143R

Аналог (замена) для BF904R

- подборⓘ MOSFET транзистора по параметрам

 

BF904R даташит

 ..1. Size:303K  philips
 bf904 bf904r n.pdf pdf_icon

BF904R

BF904; BF904R N-channel dual gate MOS-FETs Rev. 06 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown be

 ..2. Size:133K  philips
 bf904 bf904r 1.pdf pdf_icon

BF904R

DISCRETE SEMICONDUCTORS DATA SHEET BF904; BF904R N-channel dual gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R transistor consists of an amplifier MOS-FET with source FEATURES and substrate interconnected and an internal bias circu

 ..3. Size:118K  philips
 bf904 bf904r 5.pdf pdf_icon

BF904R

DISCRETE SEMICONDUCTORS DATA SHEET BF904; BF904R N-channel dual gate MOS-FETs 1999 May 17 Product specification Supersedes data of 1997 Sep 05 Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904; BF904R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. Specially designed for use

 9.1. Size:85K  philips
 bf904wr 1.pdf pdf_icon

BF904R

DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR FEATURES PINNING Specially designed for use at 5 V supply voltage PIN SYMBOL DESCRIPTION Short channel transistor with high f

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BF861B, BF861C, BF862, BF900, BF901, BF901R, BF904, BF904A, IRF1407, BF904WR, BF905, BF908, BF908R, BF908WR, BF909, BF909A, BF909R