Справочник MOSFET. IRF6626

 

IRF6626 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF6626
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0054 Ohm
   Тип корпуса: DIRECTFET

 Аналог (замена) для IRF6626

 

 

IRF6626 Datasheet (PDF)

 ..1. Size:636K  international rectifier
 irf6626.pdf

IRF6626 IRF6626

PD - 96976DIRF6626DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide l Low Profile (

 8.1. Size:274K  international rectifier
 irf6628pbf.pdf

IRF6626 IRF6626

PD - 97234IRF6628PbFIRF6628TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.9m@ 10V 2.5m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses31nC 12nC 4.1nC

 8.2. Size:180K  international rectifier
 irf6620.pdf

IRF6626 IRF6626

PD - 95823AIRF6620HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 2.7m@VGS = 10V 28nCl Low Switching Losses3.6m@VGS = 4.5Vl Low Profile (

 8.3. Size:264K  international rectifier
 irf6629pbf.pdf

IRF6626 IRF6626

PD - 97235IRF6629PbFIRF6629TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.6m@ 10V 2.1m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses34nC 11nC 4.2n

 8.4. Size:245K  international rectifier
 irf6622pbf.pdf

IRF6626 IRF6626

PD - 97244IRF6622PbFIRF6622TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)25V max 20V max 4.9m@ 10V 6.8m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8Vl Lo

 8.5. Size:170K  international rectifier
 irf6623.pdf

IRF6626 IRF6626

PD - 95824BIRF6623HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 5.7m@VGS = 10V 11nCl Low Switching Losses9.7m@VGS = 4.5Vl Low Profile (

 8.6. Size:259K  international rectifier
 irf6621.pdf

IRF6626 IRF6626

PD - 97005AIRF6621DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (

 8.7. Size:232K  infineon
 irf6620pbf irf6620trpbf.pdf

IRF6626 IRF6626

PD - 97092IRF6620PbFIRF6620TRPbFDirectFET Power MOSFET l RoHS Compliant VDSS RDS(on) maxQg(typ.)l Lead-Free (Qualified up to 260C Reflow)l Application Specific MOSFETs20V 2.7m@VGS = 10V 28nCl Ideal for CPU Core DC-DC Converters3.6m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (

 8.8. Size:237K  infineon
 irf6623pbf irf6623trpbf.pdf

IRF6626 IRF6626

PD - 97085IRF6623PbFIRF6623TRPbFl RoHS Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS RDS(on) maxQg(typ.)l Application Specific MOSFETs20V 5.7m@VGS = 10V 11nCl Ideal for CPU Core DC-DC Converters9.7m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (

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