IRF6655 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF6655
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2.8 ns
Cossⓘ - Выходная емкость: 110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.062 Ohm
Тип корпуса: DIRECTFET
IRF6655 Datasheet (PDF)
irf6655.pdf
PD - 96926DIRF6655DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) l Low Profile (
irf6641pbf.pdf
PD - 97262IRF6641TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)200V max 20V max 51m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated Converter34nC 9.5nC 4.0VPrimary Switch Socketl Optimized for Synchronous Rectifica
irf6631.pdf
PD - 97183IRF6631DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6610.pdf
PD - 97012IRF6610DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) RDS(on) Low Profile (
irf6628pbf.pdf
PD - 97234IRF6628PbFIRF6628TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.9m@ 10V 2.5m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses31nC 12nC 4.1nC
irf6620.pdf
PD - 95823AIRF6620HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 2.7m@VGS = 10V 28nCl Low Switching Losses3.6m@VGS = 4.5Vl Low Profile (
irf6678.pdf
PD - 96979FIRF6678DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6619.pdf
PD - 96917BIRF6619DirectFET Power MOSFET Typical values (unless otherwise specified)l Low Profile (
irf6612.pdf
PD - 95842IRF6612/IRF6612TR1HEXFET Power MOSFETVDSS RDS(on) max Qg(typ.)l Application Specific MOSFETs 30V 3.3m@VGS = 10V 30nC4.4m@VGS = 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6601.pdf
PD - 94366FIRF6601/IRF6601TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters20V 3.8m@VGS = 10V 30nCl Low Conduction Losses5.0m@VGS = 4.5Vl Low Switching Lossesl Low Profile (
irf6608.pdf
PD - 94727BIRF6608HEXFET Power MOSFETl Application Specific MOSFETsVDSS RDS(on) maxQgl Ideal for CPU Core DC-DC Convertersl Low Conduction Losses30V 9.0m@VGS = 10V 16nCl Low Switching Losses11m@VGS = 4.5Vl Low Profile (
irf6602.pdf
PD - 94363CIRF6602/IRF6602TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs20V 13m@VGS = 10V 12nCl Ideal for CPU Core DC-DC Converters19m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6611.pdf
PD - 96978EIRF6611DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6613.pdf
PD - 95881BIRF6613HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for Synchronous Rectification in Isolated VDSS RDS(on) max Qg(typ.)DC-DC Converters3.4m@VGS = 10V40V 42nCl Low Conduction Losses4.1m@VGS = 4.5Vl Low Switching Lossesl Low Profile (
irf6633.pdf
PD - 96989BIRF6633DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6626.pdf
PD - 96976DIRF6626DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide l Low Profile (
irf6629pbf.pdf
PD - 97235IRF6629PbFIRF6629TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.6m@ 10V 2.1m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses34nC 11nC 4.2n
irf6633apbf.pdf
PD - 97122AIRF6633APbFIRF6633ATRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)20V max 20V max 4.1m@ 10V 7.0m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.9nC 1.7nC 33nC 8.5nC 1.8Vl Lo
irf6644.pdf
PD - 96908EIRF6644DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) l Low Profile (
irf6646.pdf
PD - 96995AIRF6646DirectFET Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or bromide VDSS VGS RDS(on) Low Profile (
irf6616.pdf
PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6617.pdf
PD - 95847IRF6617HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses30V 8.1m@VGS = 10V 11nCl Low Switching Losses10.3m@VGS = 4.5Vl Low Profile (
irf6622pbf.pdf
PD - 97244IRF6622PbFIRF6622TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)25V max 20V max 4.9m@ 10V 6.8m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8Vl Lo
irf6645pbf.pdf
IRF6645PbFIRF6645TRPbFDirectFET Power MOSFET l RoHS Compliant, Halogen-Free Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) l Application Specific MOSFETs100V max 20V max 28m@ 10Vl Ideal for High Performance Isolated ConverterPrimary Switch SocketQg tot Qgd Vgs(th) l Optimized for Synchronous Rectifica
irf6603.pdf
PD - 94364APROVISIONALIRF6603DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 3.9m@VGS = 10V 28A Low Conduction Losses5.5m@VGS = 4.5V 22A High Cdv/dt Immunity Low Profile (
irf6618.pdf
PD - 94726CIRF6618/IRF6618TR1HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETs30V 2.2m@VGS = 10V 43 nCl Ideal for CPU Core DC-DC Converters3.4m@VGS = 4.5Vl Low Conduction Lossesl Low Switching Lossesl Low Profile (
irf6623.pdf
PD - 95824BIRF6623HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 5.7m@VGS = 10V 11nCl Low Switching Losses9.7m@VGS = 4.5Vl Low Profile (
irf6691.pdf
PD - 95867IRF6691HEXFET Power MOSFET plus Schottky Diodel Application Specific MOSFETs VDSS RDS(on) maxQg(typ.)l Integrates Monolithic Trench Schottky Diode20V 2.5m@VGS = 4.5V 47nCl Ideal for CPU Core DC-DC Converters1.8m@VGS = 10Vl Low Conduction Lossesl Low Reverse Recovery Lossesl Low Switching Lossesl Low Reverse Recovery Charge and Low Vfl Low Profile (
irf6665.pdf
PD - 96900CIRF6665DIGITAL AUDIO MOSFETKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD and lower EMI
irf6662.pdf
PD - 97039AIRF6662DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (
irf6638pbf.pdf
PD - 97239IRF6638PbFIRF6638TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters 30V max 20V max 2.2m@ 10V 3.0m@ 4.5Vl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt I
irf6635pbf.pdf
PD - 97086IRF6635PbFIRF6635TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters30V max 20V max 1.3m@ 10V 1.8m@ 4.5Vl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt
irf6637pbf.pdf
PD - 97088IRF6637PbFIRF6637TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)30V max 20V max 5.7m@ 10V 8.2m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Convertersl Low Conduction Losses and Switching L
irf6614.pdf
PD -96907BIRF6614DirectFET Power MOSFET Typical values (unless otherwise specified)l Application Specific MOSFETsVDSS VGS RDS(on) RDS(on) l Lead and Bromide Free 40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Low Profile (
irf6607.pdf
PD - 94574IRF6607HEXFET Power MOSFETVDSS RDS(on) maxQgl Application Specific MOSFETsl Ideal for CPU Core DC-DC Converters30V 3.3m@VGS = 10V 50nCl Low Conduction Losses4.4m@VGS = 4.5Vl High Cdv/dt Immunityl Low Profile (
irf6636.pdf
PD - 96977DIRF6636DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6621.pdf
PD - 97005AIRF6621DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6609.pdf
PD - 95822IRF6609HEXFET Power MOSFETVDSS RDS(on) maxQgl Low Conduction Losses20V 2.0m@VGS = 10V 46nCl Low Switching Losses2.6m@VGS = 4.5Vl Ideal Synchronous Rectifier MOSFETl Low Profile (
irf6604.pdf
PD - 94365PROVISIONALIRF6604DirectFETTM Power MOSFET Application Specific MOSFETsVDSS RDS(on) max ID Ideal for CPU Core DC-DC Converters30V 11.5m@VGS = 7.0V 16A Low Conduction Losses13m@VGS = 4.5V 14A Low Switching Losses Low Profile (
irf6643pbf.pdf
PD - 97112AIRF6643TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)150V max 20V max 29m@ 10Vl Application Specific MOSFETsl Ideal for High Performance Isolated Converter Qg tot Qgd Vgs(th) Primary Switch Socket39nC 11nC 4.0Vl Optimized for Synchronous Rectificat
irf6614pbf irf6614trpbf.pdf
PD -97090IRF6614PbFIRF6614TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)40V max 20V max 5.9m@ 10V 7.1m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8Vl Low
irf6662pbf irf6662trpbf.pdf
PD - 97243AIRF6662PbFIRF6662TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260C Reflow)17.5m@ 10V100V max 20V max Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated ConverterPrimary Switch Socket22nC 6.8nC 1.2nC 50nC 11nC
irf6637pbf irf6637trpbf.pdf
PD - 97088IRF6637PbFIRF6637TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)30V max 20V max 5.7m@ 10V 8.2m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Convertersl Low Conduction Losses and Switching L
irf6648pbf irf6648trpbf.pdf
IRF6648PbF IRF6648TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) Application Specific MOSFETs 60V min 20V max 5.5m@ 10V Optimized for Synchronous Rectification for 5V to 12V outputs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Co
irf6674trpbf.pdf
PD - 97133IRF6674TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS Compliant VDSS VGS RDS(on) l Lead-Free (Qualified up to 260C Reflow)60V max 20V max 9.0m@ 10Vl Application Specific MOSFETsQg tot Qgd Vgs(th) l Ideal for High Performance Isolated ConverterPrimary Switch Socket24nC 8.3nC 4.0Vl Optimized for Synchronous Rectificat
irf6620pbf irf6620trpbf.pdf
PD - 97092IRF6620PbFIRF6620TRPbFDirectFET Power MOSFET l RoHS Compliant VDSS RDS(on) maxQg(typ.)l Lead-Free (Qualified up to 260C Reflow)l Application Specific MOSFETs20V 2.7m@VGS = 10V 28nCl Ideal for CPU Core DC-DC Converters3.6m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
irf6616pbf irf6616trpbf.pdf
PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6665pbf irf6665trpbf.pdf
PD - 97230AIRF6665PbFDIGITAL AUDIO MOSFETIRF6665TRPbFKey ParametersFeaturesVDS100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 53 m: applicationsQg typ.8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ.1.9 Low Qrr for better THD
irf6623pbf irf6623trpbf.pdf
PD - 97085IRF6623PbFIRF6623TRPbFl RoHS Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS RDS(on) maxQg(typ.)l Application Specific MOSFETs20V 5.7m@VGS = 10V 11nCl Ideal for CPU Core DC-DC Converters9.7m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
irf6618pbf irf6618trpbf.pdf
PD - 97240AIRF6618PbFIRF6618TRPbFl RoHs Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs30V max 20V max 2.2m@ 10V 3.4m@ 4.5Vl Ideal for CPU Core DC-DC Convertersl Low Conduction LossesQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l High Cdv/dt Immunity43nC 15nC 4.0nC 46nC 28nC 1.64Vl
irf6644pbf.pdf
IRF6644PbF IR MOSFET DirectFET Power MOSFET Typical values (unless otherwise specified) V V R (typ )Quality Requirement Category: Consumer DSS GS DS(on) . 100V min. 20V max 10.3m@ 10V Applications Q Q V g tot gd gs(th) RoHS Compliant 28nC 9.0nC 3.7V Lead-Free (Qualified up to 260C Reflow) Application Specifies MOSFETs Ideal fo
irf6646pbf irf6646trpbf.pdf
PD - 97224AIRF6646PbFIRF6646TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant RDS(on) VDSS VGSl Lead-Free (Qualified up to 260C Reflow)7.6m@ 10V80V max 20V maxl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for High Performance Isolated ConverterPrimary Switch Socket36nC 12nC 2.0nC 48nC 18nC
irf6668pbf irf6668trpbf.pdf
PD - 97232AIRF6668PbFIRF6668TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)RDS(on) VDSS VGSl Application Specific MOSFETs12m@ 10Vl Ideal for High Performance Isolated Converter 80V max 20V maxPrimary Switch SocketQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Synchronous
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918