Справочник MOSFET. BF908WR

 

BF908WR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BF908WR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.04 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 3.1 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm
   Тип корпуса: SOT343R

 Аналог (замена) для BF908WR

 

 

BF908WR Datasheet (PDF)

 ..1. Size:69K  philips
 bf908wr 1.pdf

BF908WR BF908WR

DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t

 ..2. Size:206K  philips
 bf908wr.pdf

BF908WR BF908WR

DISCRETE SEMICONDUCTORS DATA SHEETBF908WRN-channel dual-gate MOS-FETPreliminary specification 1995 Apr 25NXP Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward transfer 1s, b sourceadmittance to input capacitance ratio2 d dr

 ..3. Size:103K  philips
 bf908wr 0.pdf

BF908WR BF908WR

DISCRETE SEMICONDUCTORSDATA SHEETBF908WRN-channel dual-gate MOS-FET1995 Apr 25Preliminary specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Preliminary specificationN-channel dual-gate MOS-FET BF908WRFEATURES PINNING High forward transfer admittancePIN SYMBOL DESCRIPTION Short channel transistor with high forward t

 9.1. Size:258K  philips
 bf908-r n.pdf

BF908WR BF908WR

BF908; BF908RDual-gate MOS-FETsRev. 03 14 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http

 9.2. Size:60K  philips
 bf908 bf908r 2.pdf

BF908WR BF908WR

DISCRETE SEMICONDUCTORSDATA SHEETBF908; BF908RDual-gate MOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationDual-gate MOS-FETs BF908; BF908RFEATURES High forward transfer admittancehandbook, halfpaged4 3 Short channel transistor with high forward transferadm

 9.3. Size:87K  philips
 bf908 bf908r 1.pdf

BF908WR BF908WR

DISCRETE SEMICONDUCTORSDATA SHEETBF908; BF908RDual-gate MOS-FETsProduct specification 1996 Jul 30Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationDual-gate MOS-FETs BF908; BF908RFEATURES High forward transfer admittancehandbook, halfpaged4 3 Short channel transistor with high forward transferadm

Другие MOSFET... BF901R , BF904 , BF904A , BF904R , BF904WR , BF905 , BF908 , BF908R , 7N60 , BF909 , BF909A , BF909R , BF909WR , BF910 , BF960 , BF960S , BF961 .

 

 
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