IRF7807V - параметры транзистора MOSFET, его аналоги, datasheet

IRF7807V Datasheet (PDF)

..1. Size:159K international rectifier
irf7807v.pdf pdf_icon

PD-94108IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction LossesA Low Switching Losses1 8S D2 7Description S DThis new device employs advanced HEXFET Power3 6S DMOSFET technology to achieve an unprecedented4 5balance of on-resistance and gate charge. TheG Dreduction of conduction and switching losses m

0.1. Size:115K international rectifier
irf7807vd2.pdf pdf_icon

PD-94079IRF7807VD2FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

0.2. Size:117K international rectifier
irf7807vd1.pdf pdf_icon

PD-94078IRF7807VD1FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET1 8and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7A/S K/DConverters Up to 5A Output3 6A/S K/D Low Conduction Losses4 5 Low Switching LossesG K/DD Low Vf Schottky RectifierTop ViewDescriptionSO-8The FETKY family of Co-Pack H

0.3. Size:213K international rectifier
irf7807vtrpbf-1.pdf pdf_icon

IRF7807VTRPbF-1HEXFET Power MOSFETVDS 30 VA1 8S DRDS(on) max 25 m2 7(@V = 4.5V) S DGSQg (typical) 9.5 nC3 6S DID 4 58.3 A G D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmen

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .