IRF7809AV - описание и поиск аналогов

PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses A A Minimizes Parallel MOSFETs for high current 1 8 S D applications 2 7 100% Tested for Rg S D Lead-Free 3 6 S D Description 4 5 G D This new device employs advanced HEXFET Power MOSFET technology to achi

PD-90010 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D This new device employs advanced HEXFET Power 4 5 G D MOSFET technology to achieve an unprecedented balance of on-resistan

PD - 93810 PD - 93811 IRF7809A/IRF7811A IRF7809A/IRF7811A PROVISIONAL DATASHEET N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters Low Conduction Losses A Low Switching Losses A 1 8 S D Minimizes Parallel MOSFETs for high current applications 2 7 S D 3 6 Description S D These new devices emplo

PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters Ideal for CPU Core DC-DC Converters New CopperStrapTM Interconnect for Lower A A Electrical and Thermal Resistance 1 8 S D Low Conduction Losses 2 7 Low Switching Losses S D Minimizes Parallel MOSFETs fo

PD - 94635B IRF7805Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Curr

PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters Up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

PD 96367B AUIRF7805Q Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance A A V(BR)DSS 30V 1 l Logic Level 8 S D l N Channel MOSFET 2 7 S D RDS(on) typ. 9.2m l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 max. 11m l 150 C Operating Temperature G D l Automotive [Q101] Qualified Top View ID 13A l Lead-Free, RoHS Compliant D

IRF7807TRPbF-1 IRF7807ATRPbF-1 HEXFET Chip-Set for DC-DC Converters A VDS 30 V 1 8 S D RDS(on) max 2 7 S D 25 m (@V = 4.5V) GS 3 6 S D Qg (typical) 12 nC 4 5 G D ID 8.3 A (@T = 25 C) Top View SO-8 A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co

PD 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistanc

PD 96114 IRF7805QPbF l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount A 1 8 l Available in Tape & Reel S D l 150 C Operating Temperature 2 7 S D l Automotive [Q101] Qualified 3 6 S D l Lead-Free 4 5 G D Description SO-8 Top View Specifically designed for Automotive applications, these HEXFET Power MOSFET's in package utilize

PD-94079 IRF7807VD2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 A/S K/D and Schottky Diode 2 7 A/S K/D Ideal for Synchronous Rectifiers in DC-DC 3 6 Converters up to 5A Output A/S K/D Low Conduction Losses 4 5 G K/D Low Switching Losses D Low Vf Schottky Rectifier SO-8 Top View Description The FETKY family of Co-Pac

PD-94078 IRF7807VD1 FETKY MOSFET / SCHOTTKY DIODE Co-Pack N-channel HEXFET Power MOSFET 1 8 and Schottky Diode A/S K/D Ideal for Synchronous Rectifiers in DC-DC 2 7 A/S K/D Converters Up to 5A Output 3 6 A/S K/D Low Conduction Losses 4 5 Low Switching Losses G K/D D Low Vf Schottky Rectifier Top View Description SO-8 The FETKY family of Co-Pack H

PD - 96253 IRF7805ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D l Halogen-Free 2 7 S D 3 6 Benefits S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 Top View l

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

IRF7807VTRPbF-1 HEXFET Power MOSFET VDS 30 V A 1 8 S D RDS(on) max 25 m 2 7 (@V = 4.5V) S D GS Qg (typical) 9.5 nC 3 6 S D ID 4 5 8.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen

PD - 94707A IRF7807Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l

PD 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A Ideal for Mobile DC-DC Converters 1 8 S D Low Conduction Losses 2 7 S D Low Switching Losses 3 6 S D Description 4 5 G D These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented SO-8 Top View balance of on-resistan

PD - 95211B IRF7807ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg(typ.) l Control FET for Notebook Processor Power 13.8m @VGS = 10V 30V 7.2nC l Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Networking and Telecommunication Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D

PD - 96011A IRF7805ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High Frequency Point-of-Load 6.8m @VGS = 10V 30V 18nC Synchronous Buck Converter for Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Vol

IRF7805PbF HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs A A 1 8 S D Ideal for Mobile DC-DC Converters 2 7 S D Low Conduction Losses 3 6 S D Low Switching Losses 4 5 G D Lead-Free SO-8 Top View IRF7805PbF Description Devices Features This new device employs advanced HEXFET Power IRF7805PbF MOSFET technology to

PD-94108 IRF7807V N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses A Low Switching Losses 1 8 S D 2 7 Description S D This new device employs advanced HEXFET Power 3 6 S D MOSFET technology to achieve an unprecedented 4 5 balance of on-resistance and gate charge. The G D reduction of conduction and switching losses m

SMD Type MOSFET N-Channel Enhancement MOSFET IRF7805Z (KRF7805Z) Features SOP-8 VDS (V) = 30V ID = 16 A (VGS = 10V) RDS(ON) 6.8m (VGS = 10V) A HEXFET Power MOSFET A 1 8 1.50 0.15 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TA

IRF7807ATR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch