IRFB3004G - Аналоги. Основные параметры
Наименование производителя: IRFB3004G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 380 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 340 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 220 ns
Cossⓘ - Выходная емкость: 2020 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00175 Ohm
Тип корпуса: TO220AB
Аналог (замена) для IRFB3004G
IRFB3004G технические параметры
irfb3004gpbf.pdf
PD - 96237 IRFB3004GPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A Benefits ID (Package Limited) 195A S l Improved Gate, Avalanche and Dynamic dV/dt Rugged
irfb3004pbf irfs3004pbf irfsl3004pbf.pdf
PD - 97377 IRFB3004PbF IRFS3004PbF IRFSL3004PbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.4m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.75m G ID (Silicon Limited) 340A c Benefits ID (Package Limited) 195A S l Improved Gate,
irfb3004.pdf
isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 FEATURES Static drain-source on-resistance RDS(on) 1.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched a
irfb3006pbf.pdf
IRFB3006PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification RDS(on) typ. 2.1m in SMPS l Uninterruptible Power Supply max. 2.5m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic D dV/dt Ruggedness l Full
Другие MOSFET... IRF8721G , IRF8734 , IRF8736 , IRF8788 , IRFB23N15D , IRFB23N20D , IRFB260N , IRFB3004 , 2N60 , IRFB3006 , IRFB3006G , IRFB3077 , IRFB3077G , IRFB31N20D , IRFB3206 , IRFB3206G , IRFB3207 .
Список транзисторов
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