IRFB42N20D - описание и поиск аналогов

PD- 94208 SMPS MOSFET IRFB42N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.055 44A Motor Control Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Vo

PD- 95470 SMPS MOSFET IRFB42N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.055 44A l Motor Control l Uninterrutible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Char

isc N-Channel MOSFET Transistor IRFB42N20D IIRFB42N20D FEATURES Static drain-source on-resistance RDS(on) 55m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters Uninterruptible Power Supplies ABSOLUTE MAXIMUM RATINGS(T =2

PD - 95757A IRFB4215PbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 17

PD - 97078A IRFB4229PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP Sustain, VDS min 250 V Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C and Pass Switch Applications 91 A l Low QG f

PD - 96918A DIGITAL AUDIO MOSFET IRFB4212PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 100 V amplifier applications m RDS(ON) typ. @ 10V 72.5 Low RDSON for improved efficiency Qg typ. 15 nC Low QG and QSW for better THD and improved Qsw typ. 8.3 nC efficiency RG(int) typ. 2.2 Low QRR for better THD and lower EMI TJ max 175 C

PD - 97004A IRFB4233PbF PDP SWITCH Features Key Parameters l Advanced process technology VDS min 230 V l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 276 V l Low EPULSE rating to reduce power dissipation m RDS(ON) typ. @ 10V 31 in PDP Sustain, Energy Recovery and Pass IRP max @ TC= 100 C 114 A Switch Applications

PD - 95884 IRFB4215 HEXFET Power MOSFET l Advanced Process Technology D VDSS = 60V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 9.0m G l Fast Switching l Fully Avalanche Rated ID = 115A l Optimized for SMPS Applications S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techn

PD - 97227A IRFB4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications RDS(ON) typ. @ 10V m l Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 170 A and Pass Switch Application

IRFB4227 Silicon N-Channel Power MOSFET Description The IRFB4227 uses advanced trench technology and design to provide Excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =200V,I =65A DS D R 20m @V =10V (Typ 20m ) dson GS R 25m @V =4.5V (Typ 25m ) dson GS Low ON Resistance Low Reverse transfer capacitances 100% Sin

isc N-Channel MOSFET Transistor IRFB4228 IIRFB4228 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4227 IIRFB4227 FEATURES Static drain-source on-resistance RDS(on) 24m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4229 IIRFB4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4212 IIRFB4212 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a