IRFB5620 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFB5620
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 144 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 25 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 25 nC
Время нарастания (tr): 14.6 ns
Выходная емкость (Cd): 125 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0725 Ohm
Тип корпуса: TO220AB
IRFB5620 Datasheet (PDF)
irfb5620pbf.pdf
PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM
irfb5620pbf.pdf
PD - 96174DIGITAL AUDIO MOSFETIRFB5620PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS200 V Amplifier ApplicationsRDS(ON) typ. @ 10V m60 Low RDSON for Improved EfficiencyQg typ.25 nC Low QG and QSW for Better THD and Improved Qsw typ.9.8 nCRG(int) typ. 2.6 EfficiencyTJ max175 C Low QRR for Better THD and Lower EM
irfb5620.pdf
isc N-Channel MOSFET Transistor IRFB5620IIRFB5620FEATURESStatic drain-source on-resistance:RDS(on) 72.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and repetitive avalanchecapabilityABSOLUTE MAXIMUM RATIN
irfb5615pbf.pdf
PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI
irfb5615pbf.pdf
PD - 96173DIGITAL AUDIO MOSFETIRFB5615PbFFeaturesKey Parameters Key Parameters Optimized for Class-D AudioVDS150 V Amplifier ApplicationsRDS(ON) typ. @ 10V m32 Low RDSON for Improved Efficiency Qg typ.26 nCQsw typ. Low QG and QSW for Better THD and Improved 11 nCRG(int) typ. 2.7 EfficiencyTJ max175 C Low QRR for Better THD and Lower EMI
irfb5615.pdf
isc N-Channel MOSFET Transistor IRFB5615IIRFB5615FEATURESStatic drain-source on-resistance:RDS(on) 39mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
