IRFHM831 - описание и поиск аналогов

PD -97539A IRFHM831PbF HEXFET Power MOSFET VDS 30 V D 5 4 G RDS(on) max 7.8 m (@VGS = 10V) D 6 3 S D 7 2 S Qg (typical) 7.3 nC D 8 1 S RG (typical) 0.5 ID PQFN 3.3mm x 3.3mm 40 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for Buck Converters Features and Benefits Benefits Features Low Charge (typical 7.3nC) Lower Switching Losses Low Thermal Resistance to PC

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin

IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8363PbF HEXFET Power MOSFET VDS 30 V Vgs max V 20 RDS(on) max G 14.9 S G (@VGS = 10V) m S D D (@VGS = 4.5V) 20.4 D D D D Qg typ 6.7 nC PQFN Dual 3.3X3.3 mm ID 10 A (@Tc(Bottom) = 25 C) Applications Power Stage for high frequency buck converters Battery Protection charge and discharge switches Features and Benefits Features Benefits Low

IRFHM8334TRPbF VDS 30 V HEXFET Power MOSFET VGS max V 20 RDS(on) max 9.0 (@VGS = 10V) m (@VGS = 4.5V) 13.5 Qg typ. 7.1 nC ID PQFN 3.3 X 3.3 mm 25 A (@Tc(Bottom) = 25 C) Applications Control MOSFET for high frequency buck converters Features Benefits Low Thermal Resistance to PCB (

IRFHM8330PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.6 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 9.9 D Qg (typical) 9.3 nC D D D ID D 25 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Control MOSFET for sy

IRFHM8342TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 16 (@ VGS = 10V) m (@ VGS = 4.5V) 25 Qg (typical) 5.0 nC ID 20 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Load Switch Features Benefits Low Charge (typical 5.2 nC) Low Switching Losses Low Thermal Resistance to PCB (

IRFHM830PbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 3.8 m (@ VGS = 10V) Qg (typical) 15 nC Rg (typical) 2.5 ID 40 A (@TC (Bottom) = 25 C) PQFN 3.3 x 3.3 mm Applications Battery Operated DC Motor Inverter MOSFET Features Benefits Low RDSon (

PD -96327A IRFHM830DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max D 5 4 G 4.3 m (@VGS = 10V) D 6 3 S Qg (typical) 13 nC D 7 2 S RG (typical) 1.1 D 8 1 S ID 40 A 3.3mm x 3.3mm PQFN (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for Buck Converters Features and Benefits Features Benefits Low RDSon ( 4.3m ) Lower Conduction Losses Schottky intrin

IRFHM8337TRPbF HEXFET Power MOSFET VDSS 30 V RDS(on) max 12.4 (@ VGS = 10V) m (@ VGS = 4.5V) 17.9 Qg (typical) 5.4 nC ID PQFN 3.3 x 3.3 mm 18 A (@TC = 25 C) Applications System/load switch, Charge or discharge switch for battery protection Features Benefits Low Thermal Resistance to PCB (

IRFHM8326PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 4.7 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 6.7 D Qg (typical) 20 nC D D D ID D 70 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for

IRFHM8329PbF HEXFET Power MOSFET VDSS 30 V VGS max 20 V RDS(on) max 6.1 G (@ VGS = 10V) m S S S (@ VGS = 4.5V) 8.8 D Qg (typical) 13 nC D D D ID D 24 A (@TC (Bottom) = 25 C) PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for