IRFI4110G - описание и поиск аналогов

PD - 96347 IRFI4110GPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 72A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D D l Fully Characterized

IRFI4110GPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 3.7m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 4.5m ID 72A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

isc N-Channel MOSFET Transistor IRFI4110G,IIRFI4110G FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High speed power switching Hard switch and high frequency circuits ABSOLUTE MAXIMUM RATINGS(

PD - 96274 IRFI4019HG-117P DIGITAL AUDIO MOSFET Features Key Parameters Integrated Half-Bridge Package VDS 150 V Reduces the Part Count by Half m RDS(ON) typ. @ 10V 80 Facilitates Better PCB Layout Qg typ. 13 nC Key Parameters Optimized for Class-D Qsw typ. 4.1 nC Audio Amplifier Applications RG(int) typ. 2.5 Low RDS(ON) for Improved Efficiency TJ max 150 C

PD - 97254 DIGITAL AUDIO MOSFET IRFI4024H-117P Key Parameters g Features VDS 55 V Integrated half-bridge package RDS(ON) typ. @ 10V m 48 Reduces the part count by half Qg typ. 8.9 nC Facilitates better PCB layout Qsw typ. 4.3 nC Key parameters optimized for Class-D RG(int) typ. 2.3 audio amplifier applications TJ max 150 C Low RDS(ON) for improved

PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Features Key Parameters Integrated half-bridge package VDS 200 V RDS(ON) typ. @ 10V m Reduces the part count by half 80 Qg typ. Facilitates better PCB layout 19 nC Qsw typ. Key parameters optimized for Class-D 6.8 nC audio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max 150 C

PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Key Parameters g Integrated half-bridge package VDS 100 V Reduces the part count by half RDS(ON) typ. @ 10V m 58 Facilitates better PCB layout Qg typ. 12 nC Key parameters optimized for Class-D Qsw typ. 6.9 nC audio amplifier applications RG(int) typ. 3.4 Low RDS(ON) for improved efficiency TJ m

PD - 97475A IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avala

PD - 97201B IRFI4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 250 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 300 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 32 A and Pass Switch Applications

PD - 97104 IRFI4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 12.2m l Hard Switched and High Frequency Circuits max. 16m Benefits l Low RDSON Reduces Losses ID 34A l Low Gate Charge Improves the Switching Performance D D l Improved Diode Recov

PD - 97252 DIGITAL AUDIO MOSFET IRFI4020H-117P Features Key Parameters Integrated half-bridge package VDS 200 V RDS(ON) typ. @ 10V m Reduces the part count by half 80 Qg typ. Facilitates better PCB layout 19 nC Qsw typ. Key parameters optimized for Class-D 6.8 nC audio amplifier applications RG(int) typ. 3.0 Low RDS(ON) for improved efficiency TJ max 150 C

PD - 97036B IRFI4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 47 A and Pass Switch Applications

PD - 97249A DIGITAL AUDIO MOSFET IRFI4212H-117P Features Key Parameters g Integrated half-bridge package VDS 100 V Reduces the part count by half RDS(ON) typ. @ 10V m 58 Facilitates better PCB layout Qg typ. 12 nC Key parameters optimized for Class-D Qsw typ. 6.9 nC audio amplifier applications RG(int) typ. 3.4 Low RDS(ON) for improved efficiency TJ m

PD - 97228 IRFI4228PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 150 V l Key Parameters Optimized for PDP Sustain, VDS (Avalanche) typ. 180 V Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 12.2 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 61 A and Pass Switch Applicatio

PD - 96372 IRFI4410ZGPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 7.9m l Uninterruptible Power Supply l High Speed Power Switching max. 9.3m l Hard Switched and High Frequency Circuits ID 43A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche

PD - 9.1526A IRFI4905 HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.02 P-Channel G Fully Avalanche Rated ID = -41A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

PD - 97790 IRFI4510GPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 10.7m l Uninterruptible Power Supply l High Speed Power Switching max. 13.5m l Hard Switched and High Frequency Circuits ID 35A Benefits D D l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Ava

IRFI4410ZPbF HEXFET Power MOSFET Applications VDSS 100V High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply RDS(on) typ. 7.9m High Speed Power Switching Hard Switched and High Frequency Circuits RDS(on) max. 9.3m ID 43A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capac

IRFI4229PbF Features HEXFET Power MOSFET Advanced Process Technology Key Parameters Key Parameters Optimized for PDP Sustain, VDS max 250 V Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power VDS (Avalanche) typ. 300 V Dissipation in PDP Sustain, Energy Recovery RDS(ON) typ. @ 10V 38 m and Pass Switch Applications Low QG

IRFI4321PbF HEXFET Power MOSFET Applications VDSS 150V Motion Control Applications High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 12.2m Uninterruptible Power Supply Hard Switched and High Frequency Circuits RDS(on) max. 16m ID 34A Benefits Low RDSON Reduces Losses Low Gate Charge Improves the Switching Performance S

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4321 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4228 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4229 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T

isc N-Channel MOSFET Transistor IRFI4410Z,IIRFI4410Z FEATURES Low drain-source on-resistance RDS(on) 9.3m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc N-Channel MOSFET Transistor IRFI4510G,IIRFI4510G FEATURES Low drain-source on-resistance RDS(on) 13.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFI4227 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T