PD - 95355AIRFR15N20DPbFSMPS MOSFET IRFU15N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.165 17Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-P

PD - 94245IRFR15N20DSMPS MOSFET IRFU15N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.165 17ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

PD - 95355AIRFR15N20DPbFSMPS MOSFET IRFU15N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.165 17Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-P

isc N-Channel MOSFET Transistor IRFR15N20D, IIRFR15N20DFEATURESStatic drain-source on-resistance:RDS(on)165mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

IRFR15N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

PD - 91318BIRFR/U1205HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR1205)VDSS = 55V Straight Lead (IRFU1205) Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGDescriptionID = 44A SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This

PD - 93905AIRFR13N15DSMPS MOSFET IRFU13N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.18 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

PD- 93815AIRFR18N15DSMPS MOSFET IRFU18N15DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters150V 0.125 18ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pak Fully Characterized Avalanche VoltageIRFR18N15D IRF

PD - 91846BSMPS MOSFETIRFR1N60AIRFU1N60AApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4ABenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Vol

IRFR/U120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAKA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

PD - 95600AIRFR/U1205PbF Lead-Freewww.irf.com 112/9/04IRFR/U1205PbF2 www.irf.comIRFR/U1205PbFwww.irf.com 3IRFR/U1205PbF4 www.irf.comIRFR/U1205PbFwww.irf.com 5IRFR/U1205PbF6 www.irf.comIRFR/U1205PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Tr

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

PD - 95518ASMPS MOSFETIRFR1N60APbFIRFU1N60APbFApplicationsHEXFET Power MOSFETl Switch Mode Power Supply (SMPS)VDSS Rds(on) max IDl Uninterruptable Power Supplyl Power Factor Correction600V 7.0 1.4Al Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance

PD - 95061AIRFR18N15DPbF IRFU18N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.125 18Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pakl Fully Characterized Avalanche

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

PD- 93814AIRFR13N20DSMPS MOSFET IRFU13N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.235 13ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pak Fully Characterized Avalanche VoltageIRFR13N20D IRF

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

PD - 95026AIRFR110PbFIRFU110PbF Lead-Free12/14/04Document Number: 91265 www.vishay.com1IRFR/U110PbFDocument Number: 91265 www.vishay.com2IRFR/U110PbFDocument Number: 91265 www.vishay.com3IRFR/U110PbFDocument Number: 91265 www.vishay.com4IRFR/U110PbFDocument Number: 91265 www.vishay.com5IRFR/U110PbFDocument Number: 91265 www.vishay.com6IRFR/U1

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

PD - 95772BIRFR120ZPbFIRFU120ZPbFHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 190m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 8.7ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-r

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna

PD - 95353AIRFR12N25DPbFSMPS MOSFET IRFU12N25DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters250V 0.26 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

PD - 97683AUTOMOTIVE GRADEAUIRFR1010ZHEXFET Power MOSFETFeaturesDVDSS Advanced Process Technology 55V Low On-Resistance RDS(on) typ.5.8m 175C Operating Temperature max. 7.5mG Fast SwitchingID (Silicon Limited) 91A Repetitive Avalanche Allowed up to TjmaxID (Package Limited)S 42A Lead-Free, RoHS Compliant Automotive Qualifie

PD - 94296AIRFR12N25DSMPS MOSFET IRFU12N25DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters250V 0.26 14ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche VoltageD-Pak I-Pakand CurrentI

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T

PD-95354ASMPS MOSFETIRFR13N20DPbFIRFU13N20DPbF Lead-Freewww.irf.com 11/17/05IRFR/U13N20DPbF2 www.irf.comIRFR/U13N20DPbFwww.irf.com 3IRFR/U13N20DPbF4 www.irf.comIRFR/U13N20DPbFwww.irf.com 5IRFR/U13N20DPbF6 www.irf.comIRFR/U13N20DPbFwww.irf.com 7IRFR/U13N20DPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (T

IRFR/U130AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V (Typ.) Lower RDS(ON) : 0.092 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

PD- 95523AIRFR120PbFIRFU120PbF Lead-Free12/03/04Document Number: 91266 www.vishay.com1IRFR/U120PbFDocument Number: 91266 www.vishay.com2IRFR/U120PbFDocument Number: 91266 www.vishay.com3IRFR/U120PbFDocument Number: 91266 www.vishay.com4IRFR/U120PbFDocument Number: 91266 www.vishay.com5IRFR/U120PbFDocument Number: 91266 www.vishay.com6IRFR/U12

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

IRFR/U120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAKA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

IRFR/U110AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maxim

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 2 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) (Max.) ()VGS = 10 V 7.0 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 14RequirementQgs (nC) 2.7 Improved Gate, Avalanche and DynamicQgd (nC) 8.1dV/dt RuggednessConfiguration Sing

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

IRFR110, SiHFR110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.54 Repetitive Avalanche RatedQg (Max.) (nC) 8.3 Surface Mount (IRFR110, SiHFR110)Qgs (nC) 2.3 Available in Tape and ReelQgd (nC) 3.8 Fast SwitchingConfiguration Single

PD - 95600AIRFR/U1205PbF Lead-Freewww.irf.com 112/9/04IRFR/U1205PbF2 www.irf.comIRFR/U1205PbFwww.irf.com 3IRFR/U1205PbF4 www.irf.comIRFR/U1205PbFwww.irf.com 5IRFR/U1205PbF6 www.irf.comIRFR/U1205PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Tr

PD - 95549AIRFR13N15DPbF IRFU13N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.18 14Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageD-Pa

PD - 95951AIRFR1010ZPbFIRFU1010ZPbFFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 7.5mG Lead-FreeID = 42ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-re

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

AUTOMOTIVE GRADE AUIRFR1018E Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 7.1m 175C Operating Temperature max. 8.4m Fast Switching ID (Silicon Limited) 79A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 56A Lead-Free, RoHS Compliant Automotive Qu

PD - 97129AIRFR1018EPbFIRFU1018EPbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification inSMPS D VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.7.1m:l High Speed Power Switchingmax. 8.4m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)79A cID (Package Limited)S 56A Benefitsl Improved Gate, Avalanche and Dyna

PD-95354ASMPS MOSFETIRFR13N20DPbFIRFU13N20DPbF Lead-Freewww.irf.com 11/17/05IRFR/U13N20DPbF2 www.irf.comIRFR/U13N20DPbFwww.irf.com 3IRFR/U13N20DPbF4 www.irf.comIRFR/U13N20DPbFwww.irf.com 5IRFR/U13N20DPbF6 www.irf.comIRFR/U13N20DPbFwww.irf.com 7IRFR/U13N20DPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (T

PD - 95061AIRFR18N15DPbF IRFU18N15DPbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters150V 0.125 18Al Lead-FreeBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)D-Pak I-Pakl Fully Characterized Avalanche

IRFR1205Featuresl VDS (V) = 55V ID= 44A (VGS=10V)l27m (VGS = 10V)ll RDS(ON)DescriptionThe D-PAK is designed for surface mounting using vapor phase,infrared, or wave soldering technigues The straight lead version Dis for through- hole mounting applications. Power dissipation le-vels up to 1.5 watts are possible in typical surface mount appli-cations.Gl Ultra LowOn

IRFR13N20DTRwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

IRFR13N15DTRwww.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATION

IRFR120TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

IRFR120NTRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RAT

IRFR110TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

IRFR130ATMwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

IRFR1205TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

isc N-Channel MOSFET Transistor IRFR13N15D, IIRFR13N15DFEATURESStatic drain-source on-resistance:RDS(on)180mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor IRFR18N15D, IIRFR18N15DFEATURESStatic drain-source on-resistance:RDS(on)125mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

iscN-Channel MOSFET Transistor IRFR1N60AFEATURESLow drain-source on-resistance:RDS(ON) =7 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc N-Channel MOSFET Transistor IRFR1018E, IIRFR1018EFEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60

isc N-Channel MOSFET Transistor IRFR13N20D, IIRFR13N20DFEATURESStatic drain-source on-resistance:RDS(on)235mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency DC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120ZFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

isc N-Channel MOSFET Transistor IRFR1010Z, IIRFR1010ZFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Ga

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat