IRFR4104 - описание и поиск аналогов

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 40V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on

isc N-Channel MOSFET Transistor IRFR4104, IIRFR4104 FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate

PD - 97452A AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance V(BR)DSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant S ID (Package Limited) 42A Automotive Q

AUIRFR4104 AUTOMOTIVE GRADE AUIRFU4104 Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 5.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 119A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D

IRFR4104TRPBF www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIMU