Справочник MOSFET. IRFR48Z

 

IRFR48Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFR48Z
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 61 ns
   Cossⓘ - Выходная емкость: 290 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для IRFR48Z

 

 

IRFR48Z Datasheet (PDF)

 ..1. Size:348K  international rectifier
 irfr48zpbf irfu48zpbf.pdf

IRFR48Z IRFR48Z

PD - 95950AIRFR48ZPbFIRFU48ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 11mGDescriptionID = 42ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

 ..2. Size:348K  infineon
 irfr48zpbf irfu48zpbf.pdf

IRFR48Z IRFR48Z

PD - 95950AIRFR48ZPbFIRFU48ZPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 55V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 11mGDescriptionID = 42ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resista

 ..3. Size:242K  inchange semiconductor
 irfr48z.pdf

IRFR48Z IRFR48Z

isc N-Channel MOSFET Transistor IRFR48Z, IIRFR48ZFEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-So

 0.1. Size:292K  international rectifier
 auirfr48ztr.pdf

IRFR48Z IRFR48Z

PD - 97586AUTOMOTIVE GRADEAUIRFR48ZHEXFET Power MOSFETFeatures Advanced Process TechnologyDV(BR)DSS 55V Ultra Low On-ResistanceRDS(on) max.11m 175C Operating Temperature Fast Switching GID (Silicon Limited)62A Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 42A Lead-Free, RoHS Compliant Automotive Qualified *Des

 0.2. Size:678K  infineon
 auirfr48z.pdf

IRFR48Z IRFR48Z

AUTOMOTIVE GRADE AUIRFR48Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance VDSS 55V 175C Operating Temperature RDS(on) max. 11m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 62A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Descript

 0.3. Size:1583K  cn vbsemi
 irfr48ztr.pdf

IRFR48Z IRFR48Z

IRFR48ZTRwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

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