IRFR9N20D - описание и поиск аналогов

PD - 93919A IRFR9N20D SMPS MOSFET IRFU9N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.38 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current D-Pak I-Pak IR

PD - 95376A IRFR9N20DPbF SMPS MOSFET IRFU9N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters l Lead-Free 200V 0.38 9.4A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Cu

isc N-Channel MOSFET Transistor IRFR9N20D, IIRFR9N20D FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

PD - 96048 IRFR9024NCPbF IRFU9024NCPbF (IRFR9024NCPbF) (IRFU9024NCPbF) Lead-Free www.irf.com 1 05/31/06 IRFR/U9024NCPbF 2 www.irf.com IRFR/U9024NCPbF www.irf.com 3 IRFR/U9024NCPbF 4 www.irf.com IRFR/U9024NCPbF www.irf.com 5 IRFR/U9024NCPbF 6 www.irf.com IRFR/U9024NCPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductanc

PD- 95383A IRFR9014PbF IRFU9014PbF Lead-Free 12/07/04 Document Number 91277 www.vishay.com 1 IRFR/U9014PbF Document Number 91277 www.vishay.com 2 IRFR/U9014PbF Document Number 91277 www.vishay.com 3 IRFR/U9014PbF Document Number 91277 www.vishay.com 4 IRFR/U9014PbF Document Number 91277 www.vishay.com 5 IRFR/U9014PbF Document Number 91277 www.vishay.com 6 I

PD - 95015A IRFR9024NPbF IRFU9024NPbF Lead-Free www.irf.com 1 12/14/04 IRFR/U9024NPbF 2 www.irf.com IRFR/U9024NPbF www.irf.com 3 IRFR/U9024NPbF 4 www.irf.com IRFR/U9024NPbF www.irf.com 5 IRFR/U9024NPbF 6 www.irf.com IRFR/U9024NPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

PD - 95324A IRFR9110PbF IRFU9110PbF Lead-Free 12/14/04 Document Number 91279 www.vishay.com 1 IRFR/U9110PbF Document Number 91279 www.vishay.com 2 IRFR/U9110PbF Document Number 91279 www.vishay.com 3 IRFR/U9110PbF Document Number 91279 www.vishay.com 4 IRFR/U9110PbF Document Number 91279 www.vishay.com 5 IRFR/U9110PbF Document Number 91279 www.vishay.com 6

PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET P-Channel D Surface Mount (IRFR9310) VDSS = -400V Straight Lead (IRFU9310) Advanced Process Technology RDS(on) = 7.0 Fast Switching G Fully Avalanche Rated ID = -1.8A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon

PD- 95732A IRFR9024PbF IRFU9024PbF Lead-Free www.irf.com 1 1/10/05 IRFR/U9024PbF 2 www.irf.com IRFR/U9024PbF www.irf.com 3 IRFR/U9024PbF 4 www.irf.com IRFR/U9024PbF www.irf.com 5 IRFR/U9024PbF 6 www.irf.com IRFR/U9024PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

PD - 95064A IRFR9310PbF IRFU9310PbF l P-Channel HEXFET Power MOSFET l Surface Mount (IRFR9310) l Straight Lead (IRFU9310) D VDSS = -400V l Advanced Process Technology l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0 G l Lead-Free ID = -1.8A Description S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-

Document Number 90350 www.vishay.com C-65 Document Number 90350 www.vishay.com C-66 Document Number 90350 www.vishay.com C-67 Document Number 90350 www.vishay.com C-68 Document Number 90350 www.vishay.com C-69 Document Number 90350 www.vishay.com C-70 Document Number 90350 www.vishay.com C-71 Document Number 90350 www.vishay.com C-72 Legal Disclaimer Notice Vish

PD-95020A IRFR9120NPbF IRFU9120NPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel D VDSS = -100V l Surface Mount (IRFR9120N) l Straight Lead (IRFU9120N) l Advanced Process Technology RDS(on) = 0.48 G l Fast Switching l Fully Avalanche Rated ID = -6.6A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

PD- 95732A IRFR9024PbF IRFU9024PbF Lead-Free 1/10/05 Document Number 91278 www.vishay.com 1 IRFR/U9024PbF Document Number 91278 www.vishay.com 2 IRFR/U9024PbF Document Number 91278 www.vishay.com 3 IRFR/U9024PbF Document Number 91278 www.vishay.com 4 IRFR/U9024PbF Document Number 91278 www.vishay.com 5 IRFR/U9024PbF Document Number 91278 www.vishay.com 6 IR

PD - 95027A IRFR9210PbF IRFU9210PbF Lead-Free 12/14/04 Document Number 91281 www.vishay.com 1 IRFR/U9210PbF Document Number 91281 www.vishay.com 2 IRFR/U9210PbF Document Number 91281 www.vishay.com 3 IRFR/U9210PbF Document Number 91281 www.vishay.com 4 IRFR/U9210PbF Document Number 91281 www.vishay.com 5 IRFR/U9210PbF Document Number 91281 www.vishay.com 6

PD - 9.1506 IRFR/U9024N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N) RDS(on) = 0.175 Advanced Process Technology G Fast Switching ID = -11A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

PD - 9.1658A IRFR/U9214 PRELIMINARY HEXFET Power MOSFET P-Channel D VDSS = -250V Surface Mount (IRFR9214) Straight Lead (IRFU9214) RDS(on) = 3.0 Advanced Process Technology G Fast Switching Fully Avalanche Rated ID = -2.7A S Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silico

PD - 95375A IRFR/U9214PbF HEXFET Power MOSFET l P-Channel D VDSS = -250V l Surface Mount (IRFR9214) l Straight Lead (IRFU9214) RDS(on) = 3.0 l Advanced Process Technology G l Fast Switching l Fully Avalanche Rated ID = -2.7A S l Lead-Free Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance pe

PD - 95029A IRFR9220PbF IRFU9220PbF Lead-Free 1/10/05 Document Number 91283 www.vishay.com 1 IRFR/U9220PbF Document Number 91283 www.vishay.com 2 IRFR/U9220PbF Document Number 91283 www.vishay.com 3 IRFR/U9220PbF Document Number 91283 www.vishay.com 4 IRFR/U9220PbF Document Number 91283 www.vishay.com 5 IRFR/U9220PbF Document Number 91283 www.vishay.com 6 I

PD - 9.1507A IRFR/U9120N PRELIMINARY HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel VDSS = -100V Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) RDS(on) = 0.48 Advanced Process Technology G Fast Switching ID = -6.6A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achie

PD - 95064A IRFR9310PbF IRFU9310PbF l P-Channel HEXFET Power MOSFET l Surface Mount (IRFR9310) l Straight Lead (IRFU9310) D VDSS = -400V l Advanced Process Technology l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0 G l Lead-Free ID = -1.8A Description S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-

PD - 95096A IRFR9120PbF IRFU9120PbF Lead-Free 1/10/05 Document Number 91280 www.vishay.com 1 IRFR/U9120PbF Document Number 91280 www.vishay.com 2 IRFR/U9120PbF Document Number 91280 www.vishay.com 3 IRFR/U9120PbF Document Number 91280 www.vishay.com 4 IRFR/U9120PbF Document Number 91280 www.vishay.com 5 IRFR/U9120PbF Document Number 91280 www.vishay.com 6 I

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.2 Repetitive Avalanche Rated Qg (Max.) (nC) 8.7 Surface Mount (IRFR9110, SiHFR9110) Qgs (nC) 2.2 Straight Lead (IRFU9110, SiHFU9110) Available in Tape

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order as IRFR9010, VDS (V) - 50 SiHFR9010) Straight Lead Option (Order as IRFU9010, RDS(on) ( )VGS = - 10 V 0.50 SiHFU9010) Qg (Max.) (nC) 9.1 Repetitive Avalanche Ratings Qgs (nC) 3.0 Dynamic dV/dt Rating Simple Drive Requiremen

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 Surface Mount (IRFR9120, SiHFR9120) Qg (Max.) (nC) 18 Straight Lead (IRFU9120, SiHFU9120) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 9.0 P-Channel

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 Surface Mount (IRFR9110, SiHFR9110) Qg (Max.) (nC) 8.7 Straight Lead (IRFU9110, SiHFU9110) Qgs (nC) 2.2 Available in Tape and Reel Qgd (nC) 4.1 P-Channel

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* Surface Mount (IRFR9110/SiHFR9110) COMPLIANT Qg (Max.) (nC) 8.7 Straight Lead (IRFU9110/SiHFU9110) Qgs (nC) 2.2 Available in Tape and Reel Qgd (nC) 4.1

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 200 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 1.5 Repetitive Avalanche Rated Qg (Max.) (nC) 20 Surface Mount (IRFR9220, SiHFR9220) Qgs (nC) 3.3 Straight Lead (IRFUFU9220, SiHFU9220) Qgd (nC) 11 A

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Available RDS(on) ( )VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024) RoHS* COMPLIANT Qg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024) Qgs (nC) 5.4 Available in Tape and Reel Qgd (nC) 11 P

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Repetitive Avalanche Rated Surface Mount (IRFR9014, SiHFR9014) RDS(on) ( )VGS = - 10 V 0.50 Straight Lead (IRFU9014, SiHFU9014) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 3.8 P-Channel Fast Switch

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) Available RDS(on) ( )VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS* Qg (Max.) (nC) 14 COMPLIANT Advanced Process Technology Qgs (nC) 3.1 Fast Switching Qgd (nC) 6.8 Fully Avalanche Rated C

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 RoHS* Surface Mount (IRFR9210/SiHFR9210) Qg (Max.) (nC) 8.9 COMPLIANT Straight Lead (IRFU9210/SiHFU9210) Qgs (nC) 2.1 Qgd (nC) 3.9 Available in Tape and Reel Conf

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order As IRFR9020, VDS (V) - 50 SiHFR9020) Straight Lead Option (Order As IRFU9020, RDS(on) ( )VGS = - 10 V 0.28 SiHFU9020) Qg (Max.) (nC) 14 Repetitive Avalanche Ratings Qgs (nC) 6.5 Dynamic dV/dt Rating Simple Drive Requirements

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 3.0 Surface Mount (IRFR9210, SiHFR9210) Qg (Max.) (nC) 8.9 Straight Lead (IRFU9210, SiHFU9210) Qgs (nC) 2.1 Available in Tape and Reel Qgd (nC) 3.9 P-Channel

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 RoHS* Surface Mount (IRFR9220/SiHFR9220) Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFUFU9220/SiHFU9220) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 50 Definition RDS(on) ( )VGS = - 10 V 0.28 Surface Mountable (Order As IRFR9020, Qg (Max.) (nC) 14 SiHFR9020) Qgs (nC) 6.5 Straight Lead Option (Order As IRFU9020, SiHFU9020) Qgd (nC) 6.5 Repetitive Avalanche Ratings

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 50 Surface Mountable (Order as IRFR9010, SiHFR9010) RDS(on) ( )VGS = - 10 V 0.50 Straight Lead Option (Order as IRFU9010, SiHFU9010) Repetitive Avalanche Ratings Qg (Max.) (nC) 9.1 Dynamic dV/dt Rating Q

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 250 Surface Mount (IRFR9214/SiHFR9214) Available RDS(on) ( )VGS = - 10 V 3.0 Straight Lead (IRFU9214/SiHFU9214) RoHS* Qg (Max.) (nC) 14 COMPLIANT Advanced Process Technology Qgs (nC) 3.1 Fast Switching Qgd (nC) 6.8 Fully Avalanche Rated C

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.60 RoHS* Surface Mount (IRFR9120/SiHFR9120) COMPLIANT Qg (Max.) (nC) 18 Straight Lead (IRFU9120/SiHFU9120) Qgs (nC) 3.0 Available in Tape and Reel Qgd (nC) 9.0

IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY P-Channel VDS (V) - 400 Available Surface Mount (IRFR9310/SiHFR9310) RDS(on) ( )VGS = - 10 V 7.0 RoHS* Straight Lead (IRFU9310/SiHFU9310) Qg (Max.) (nC) 13 COMPLIANT Advanced Process Technology Qgs (nC) 3.2 Fast Switching Qgd (nC) 5.0 Fully Avalanche Rated

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 Surface Mount (IRFR9220, SiHFR9220) Qg (Max.) (nC) 20 Straight Lead (IRFUFU9220, SiHFU9220) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11 P-Channel

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 60 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = - 10 V 0.50 Repetitive Avalanche Rated Qg (Max.) (nC) 12 Surface Mount (IRFR9014, SiHFR9014) Qgs (nC) 3.8 Straight Lead (IRFU9014, SiHFU9014) Available in Tape

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 60 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.50 RoHS* Surface Mount (IRFR9014/SiHFR9014) COMPLIANT Qg (Max.) (nC) 12 Straight Lead (IRFU9014/SiHFU9014) Qgs (nC) 3.8 Available in Tape and Reel Qgd (nC) 5.1

IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.5 Surface Mount (IRFR9220, SiHFR9220) Qg (Max.) (nC) 20 Straight Lead (IRFUFU9220, SiHFU9220) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11 P-Channel

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150 C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

IRFR9024NTRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramete

IRFR9014TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

IRFR9024TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy

IRFR9120NTRPBF www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Switc

IRFR9010TR www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy