IRFS3107-7PPbFHEXFET Power MOSFETApplications D VDSS 75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ. 2.1ml Uninterruptible Power Supply max. 2.6ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID 260ASID (Package Limited) 240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized C

AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea

PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn

AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS3107PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T