IRFS3107-7P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFS3107-7P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 370 W
Предельно допустимое напряжение сток-исток |Uds|: 75 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 260 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 160 nC
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 850 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: D2PAK
Аналог (замена) для IRFS3107-7P
IRFS3107-7P Datasheet (PDF)
irfs3107-7ppbf.pdf
IRFS3107-7PPbFHEXFET Power MOSFETApplications D VDSS 75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ. 2.1ml Uninterruptible Power Supply max. 2.6ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID 260ASID (Package Limited) 240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized C
irfs3107-7ppbf.pdf
IRFS3107-7PPbFHEXFET Power MOSFETApplications D VDSS 75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ. 2.1ml Uninterruptible Power Supply max. 2.6ml High Speed Power SwitchingGl Hard Switched and High Frequency CircuitsID 260ASID (Package Limited) 240ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized C
auirfs3107-7p.pdf
AUTOMOTIVE GRADE AUIRFS3107-7P HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.1m Ultra Low On-Resistance max. 2.6m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 260A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to Tjmax Lea
irfs3107pbf irfsl3107pbf.pdf
PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn
irfs3107pbf irfsl3107pbf.pdf
PD -97144AIRFS3107PbFIRFSL3107PbFHEXFET Power MOSFETApplicationsDVDSS75Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.5m:l Uninterruptible Power Supplyl High Speed Power Switching max. 3.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)230A cID (Package Limited)195A SBenefitsl Improved Gate, Avalanche and Dyn
auirfs3107 auirfsl3107.pdf
AUIRFS3107 AUTOMOTIVE GRADE AUIRFSL3107 HEXFET Power MOSFET Features VDSS 75V Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.0m Enhanced dV/dT and dI/dT capability 175C Operating Temperature ID (Silicon Limited) 230A Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up t
irfs3107pbf.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFS3107PbFFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FDB035N10A
History: FDB035N10A
Список транзисторов
Обновления
MOSFET: NCE65TF130T | LTP70N06P | HY3506B | HY3506P | DP3080 | CRSS035N10N | CRST037N10N | S85N16S | S85N16RP | S85N16RN | S85N16R | S85N048S | S85N042S | S85N042RP | S85N042RN | S85N042R